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公开(公告)号：US20170306222A1
公开(公告)日：2017-10-26
申请号：US15644984
申请日：2017-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong Hee LEE , Hyun A KANG , Eun Joo JANG , Sang Eui LEE , Shin Ae JUN , Oul CHO , Tae Gon KIM , Tae Hyung KIM
CPC classification number: C09K11/025 , B24B1/00 , C01B17/20 , C08L33/04 , C09K11/59 , G02F1/1335 , G02F1/3615
Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.
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公开(公告)号：US20170183565A1
公开(公告)日：2017-06-29
申请号：US15387107
申请日：2016-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shin Ae JUN , Taekhoon KIM , Garam PARK , Yong Seok HAN , Eun Joo JANG , Hyo Sook JANG , Tae Won JEONG , Shang Hyeun PARK
Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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13.发明申请公开(公告)号：US20170176854A1
公开(公告)日：2017-06-22
申请号：US15375601
申请日：2016-12-12
Applicant: SAMSUNG ELECTRONICS CO., LTD. , SAMSUNG SDI CO., LTD.
Inventor： Shang Hyeun PARK , Hojeong PAEK , Jonggi KIM , Nayoun WON , Shin Ae JUN
CPC classification number: G03F7/0043 , G03F7/0047 , G03F7/029 , G03F7/031 , G03F7/033
Abstract: A photosensitive composition including: a plurality of quantum dots, wherein the quantum dot includes an organic ligand bound to a surface of the quantum dot; a photoinitiator; a binder including a carboxylic acid group; a photopolymerizable monomer having a carbon-carbon double bond; and a solvent, wherein the photoinitiator includes a first photoinitiator including an oxime compound and a second photoinitiator including at least one selected from a phosphine oxide compound and an amino ketone compound.
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公开(公告)号：US20170158954A1
公开(公告)日：2017-06-08
申请号：US15333417
申请日：2016-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeyeon YANG , Shang Hyeun PARK , Shin Ae JUN , Eun Joo JANG
CPC classification number: C09K11/025 , B82Y99/00 , C09K11/70 , G03F7/0007 , G03F7/0042 , G03F7/033 , G03F7/105
Abstract: A photosensitive composition including a quantum dot complex having a polymeric outer layer, a carboxylic acid group-containing binder, a photopolymerizable monomer having a carbon-carbon double bond, a photoinitiator, and a solvent, wherein the polymeric outer layer includes a copolymer including: a first repeating unit having a moiety capable of interacting with a surface of the quantum dot, an organic ligand compound bonded to the surface of the quantum dot, or a combination thereof, and a second repeating unit having a reactive moiety.
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15.发明申请PHOTOSENSITIVE COMPOSITIONS, PREPARATION METHODS THEREOF, AND QUANTUM DOT POLYMER COMPOSITE PREPARED THEREFROM 审中-公开光敏组合物，其制备方法及其制备的量子聚合物复合材料公开(公告)号：US20170052444A1
公开(公告)日：2017-02-23
申请号：US15241224
申请日：2016-08-19
Applicant: SAMSUNG ELECTRONICS CO., LTD. , SAMSUNG SDI CO., LTD.
Inventor： Shang Hyeun PARK , Hojeong PAEK , Eun Joo JANG , Shin Ae JUN
CPC classification number: G03F7/0007 , B82Y30/00 , B82Y40/00 , C08F220/14 , C09D4/06 , C09K11/02 , C09K11/703 , G02B5/207 , G02B5/223 , G03F7/004 , G03F7/0042 , G03F7/0047 , G03F7/033 , C08F265/06 , C08F220/06
Abstract: A photosensitive composition including a quantum dot dispersion, a reactive compound having at least two thiol groups, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes a carboxylic acid group-containing polymer and a quantum dot dispersed in the carboxylic acid group containing polymer, and wherein the carboxylic acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic moiety and not having a carboxylic acid group.
Abstract translation: 包含量子点分散体，具有至少两个硫醇基的反应性化合物，具有碳 - 碳双键的光聚合单体和光引发剂的感光组合物，其中量子点分散体包含含羧酸基团的聚合物和量子 点分散在含羧酸基的聚合物中，其中含羧酸基的聚合物包括包含具有羧酸基的第一单体和碳 - 碳双键的单体组合的共聚物和具有碳 - 碳双键的第二单体， 碳双键和疏水部分，不具有羧酸基团。
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Patent Agency Ranking
公开(公告)号：US20160214862A1
公开(公告)日：2016-07-28
申请号：US14908710
申请日：2014-07-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon KIM , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN , Hyunki KIM
Abstract: A process of synthesizing Mg—Se nanocrystals is provided, the process including reacting a first precursor including magnesium and a second precursor including selenium in the presence of a ligand compound in an organic solvent to form a nanocrystal of MgSe or an alloy thereof, wherein the organic solvent and the ligand compound do not include an oxygen functional group.
Abstract translation: 提供合成Mg-Se纳米晶体的方法，该方法包括在配体化合物存在下在有机溶剂中使包含镁的第一前体和包含硒的第二前体反应形成MgSe或其合金的纳米晶体，其中 有机溶剂和配体化合物不包括氧官能团。
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公开(公告)号：US20160167965A1
公开(公告)日：2016-06-16
申请号：US14909235
申请日：2014-07-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyo Sook JANG , Shin Ae JUN , Eun Joo JANG
IPC: C01B19/00
CPC classification number: C01B19/007 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01P2002/72 , C01P2004/64 , C01P2006/40 , C09K11/00 , C09K11/08 , C09K11/0805 , Y10S977/774 , Y10S977/896
Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.
Abstract translation: 提供合成Ga-Se纳米晶体的方法，该方法包括：使含有镓的第一前体与含有硒的第二前体接触以获得Ga-Se单一前体; 并在配体化合物的存在下将溶液中的Ga-Se单体前体反应，并且任选地与含有除了镓和硒之外的元素（A）的第三前体反应以制备由化学式1表示的Ga-Se纳米晶体： GaSexAy [化学式1]其中x为约1.1至3，y为约0.1至4。
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18.发明申请公开(公告)号：US20150062967A1
公开(公告)日：2015-03-05
申请号：US14251881
申请日：2014-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Min Jong BAE , Jeong Hee LEE , Dong Earn KIM , Sang Eui LEE , Na Youn Won , Hyun A KANG , Shin Ae JUN
IPC: F21V8/00
CPC classification number: G02B6/0096 , Y10T29/49826
Abstract: A light source unit includes a light guide plate which includes a front surface and a rear surface which are opposite to each other and a side between and connecting the front surface and the rear surface, a light conversion device on the side of the light guide plate; and a light source which generates and supplies light to the light conversion device. The light conversion device includes, a sealed tube, a light conversion member within the sealed tube and a space other than an area in the tube which is occupied by the light conversion member, defined in the tube
Abstract translation: 光源单元包括导光板，该导光板包括彼此相对的前表面和后表面以及连接前表面和后表面之间的一侧，在该导光板侧的光转换装置 ; 以及产生并向光转换装置提供光的光源。 光转换装置包括：密封管，密封管内的光转换构件，以及限定在管中的由光转换构件占据的管中的区域以外的空间
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19.发明申请公开(公告)号：US20150041715A1
公开(公告)日：2015-02-12
申请号：US14453723
申请日：2014-08-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeong Hee LEE , Hyun A KANG , Eun Joo JANG , Sang Eui LEE , Shin Ae JUN , Oul CHO , Tae Gon KIM , Tae Hyung KIM
CPC classification number: C09K11/025 , B24B1/00 , C09K11/70
Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.
Abstract translation: 一种研磨半导体纳米晶体 - 聚合物复合材料的方法，该方法包括获得包含半导体纳米晶体和第一聚合物的半导体纳米晶体 - 聚合物复合物，使半导体纳米晶体 - 聚合物复合材料与惰性有机溶剂接触; 并在惰性有机溶剂存在下研磨半导体纳米晶体 - 聚合物复合物，研磨半导体纳米晶体 - 聚合物复合材料。
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20.发明申请SEMICONDUCTOR NANOCRYSTAL-POLYMER MICRONIZED COMPOSITE, METHOD OF PREPARING THE SAME, AND OPTOELECTRONIC DEVICE 有权半导体纳米晶聚合物微复合材料，其制备方法和光电装置公开(公告)号：US20130105854A1
公开(公告)日：2013-05-02
申请号：US13661956
申请日：2012-10-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyo-Sook JANG , Hyun-A KANG , Eun-Joo JANG , Shin Ae JUN , Tae Won JEONG , In Taek HAN
IPC: H01L33/56
CPC classification number: H01L33/56 , C09C3/006 , C09C3/10 , H01L33/501 , H01L33/502 , H01L33/507 , H01L2224/48091 , Y10T428/2989 , Y10T428/2998 , H01L2924/00014
Abstract: A semiconductor nanocrystal-polymer micronized composite that includes: at least one semiconductor nanocrystal; and a polymer surrounding the at least one semiconductor nanocrystal, wherein the polymer includes at least one functional group reactive with the semiconductor nanocrystal, and wherein the semiconductor nanocrystal-polymer micronized composite has a particle diameter of less than or equal to about 70 micrometers (μm) with a standard deviation of less than or equal to about 20 micrometers (μm), and an aspect ratio of more than about 1.0 and less than or equal to about 10.
Abstract translation: 一种半导体纳米晶体 - 聚合物微粉化复合材料，其包括：至少一种半导体纳米晶体; 以及围绕所述至少一种半导体纳米晶体的聚合物，其中所述聚合物包括至少一种与所述半导体纳米晶体反应的官能团，并且其中所述半导体纳米晶体聚合物微粉化复合材料具有小于或等于约70微米的粒径（mum ），其标准偏差小于或等于约20微米（母体），并且纵横比大于约1.0且小于或等于约10。
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