公开(公告)号：US20220246610A1

公开(公告)日：2022-08-04

申请号：US17221355

申请日：2021-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghyun SONG ,  Seungyoung LEE ,  Saehan PARK

IPC: H01L27/092 ,  H01L29/423 ,  H01L21/8238

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a cross-coupled gate circuit in a three-dimensional (3D) stack including a plurality of transistors, a first gate line of a first transistor among the plurality of transistors connected to a fourth gate line of a fourth transistor among the plurality of transistors, a second gate line of a second transistor among the plurality of transistors connected to a third gate line of a third transistor among the plurality of transistors, a first conductor connecting the first gate line and the fourth gate line, a second conductor connecting the second gate line and the third gate line. The first gate line and the second gate line are arranged above the third gate line and the fourth gate line, respectively.

公开(公告)号：US20220157813A1

公开(公告)日：2022-05-19

申请号：US17167640

申请日：2021-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byounghak HONG ,  Seunghyun SONG

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66

Abstract: A hybrid multi-stack semiconductor device and a method of manufacturing the same are provided. The hybrid multi-stack semiconductor device includes a nanosheet stack and a fin field-effect transistor (finFET) stack formed above the nanosheet stack, wherein the nanosheet stack includes a plurality of nanosheet layers formed above a substrate and enclosed by a 1st gate structure, wherein the at least one fin structure has a self-aligned form with respect to the nanosheet stack so that a left horizontal distance between a leftmost side surface of the at least one fin structure and a left side surface of the nanosheet stack is equal to a right horizontal distance between a rightmost side surface of the at least one fin structure and a right side surface of the nanosheet stack.