公开(公告)号：US20230020234A1

公开(公告)日：2023-01-19

申请号：US17947282

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yong YOO ,  Jong Jin Lee ,  Rak Hwan Kim ,  Eun-Ji Jung ,  Won Hyuk Hong

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285

Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.

公开(公告)号：US11450607B2

公开(公告)日：2022-09-20

申请号：US16892649

申请日：2020-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yong Yoo ,  Jong Jin Lee ,  Rak Hwan Kim ,  Eun-Ji Jung ,  Won Hyuk Hong

IPC: H01L23/48 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285

Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.

公开(公告)号：US11367651B2

公开(公告)日：2022-06-21

申请号：US16902923

申请日：2020-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Keun Chung ,  Joon Gon Lee ,  Rak Hwan Kim ,  Chung Hwan Shin ,  Do Sun Lee ,  Nam Gyu Cho

IPC: H01L21/768

Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

公开(公告)号：US20210020500A1

公开(公告)日：2021-01-21

申请号：US16902923

申请日：2020-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Keun Chung ,  Joon Gon Lee ,  Rak Hwan Kim ,  Chung Hwan Shin ,  Do Sun Lee ,  Nam Gyu Cho

IPC: H01L21/768

Abstract: A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

公开(公告)号：US10418326B2

公开(公告)日：2019-09-17

申请号：US15833041

申请日：2017-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Ji Jung ,  Rak Hwan Kim ,  Byung Hee Kim ,  Young Hun Kim ,  Gyeong Yun Han

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.