公开(公告)号：US11322590B2

公开(公告)日：2022-05-03

申请号：US16875314

申请日：2020-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongki Jung ,  Myungil Kang ,  Yoonhae Kim ,  Kwanheum Lee

IPC: H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.

公开(公告)号：US10658463B2

公开(公告)日：2020-05-19

申请号：US15880969

申请日：2018-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongki Jung ,  Myungil Kang ,  Yoonhae Kim ,  Kwanheum Lee

IPC: H01L21/8234 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.