公开(公告)号：US20210389277A1

公开(公告)日：2021-12-16

申请号：US17141456

申请日：2021-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangmin PARK ,  Sihoon LEE ,  Jaeheung LIM ,  Jeongho PARK

IPC: G01N29/02 ,  G01N29/24

Abstract: A gas sensor includes a piezoelectric substrate; a resonator in an electrode region on an upper surface of the piezoelectric substrate, the resonator including interdigital transducer (IDT) electrodes and IDT pads connected to the IDT electrodes, the IDT electrodes configured to generate a surface acoustic wave in a center region of the electrode region, the surface acoustic wave propagating in a first horizontal direction; a sensing film in the center region of the electrode region on the upper surface of the piezoelectric substrate, the sensing film including a sensing material that interacts with a target gas; and a heater in an edge region surrounding the electrode region on the upper surface of the piezoelectric substrate, the heater including heater electrodes configured to heat the sensing film and heater pads connected to the heater electrodes, the heater electrodes and the heater pads forming a closed conduction loop.

公开(公告)号：US20210151506A1

公开(公告)日：2021-05-20

申请号：US17032571

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonguk KIM ,  Dongsung CHOI ,  Kwangmin PARK ,  Jaeho JUNG

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device including a first conductive line on a substrate, memory cell structures stacked on the first conductive line, a second conductive line between the memory cell structures; and a third conductive line on the memory cell structures may be provided. Each of the plurality of memory cell structures includes a data storage material pattern, a switching material pattern, and a plurality of electrode patterns, at least one of the electrode patterns includes at least one of carbon material layer or a carbon-containing material layer, and the at least one of the electrode patterns includes a first region doped with a nitrogen and a second region that is not doped with the nitrogen, or is doped with the nitrogen at a first concentration lower than a second concentration of the nitrogen in the first region.