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    Process chamber and substrate processing apparatus including the same
    11.
    发明授权
    Process chamber and substrate processing apparatus including the same 有权

    公开(公告)号：US11610788B2

    公开(公告)日：2023-03-21

    申请号：US17217417

    申请日：2021-03-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

    IPC: H01L21/67 ,  H01L21/02

    Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

    Process chamber and substrate processing apparatus including the same
    13.
    发明授权
    Process chamber and substrate processing apparatus including the same 有权

    公开(公告)号：US10991600B2

    公开(公告)日：2021-04-27

    申请号：US15848481

    申请日：2017-12-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

    IPC: H01L21/67 ,  H01L21/02

    Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

    MANUFACTURING METHOD AND FLUID SUPPLY SYSTEM FOR TREATING SUBSTRATE
    17.
    发明申请
    MANUFACTURING METHOD AND FLUID SUPPLY SYSTEM FOR TREATING SUBSTRATE 审中-公开
    用于处理基板的制造方法和流体供应系统

    公开(公告)号：US20170062208A1

    公开(公告)日：2017-03-02

    申请号：US15350983

    申请日：2016-11-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-Min Oh ,  HyoSan Lee ,  YongSun Ko ,  KyoungSeob Kim ,  SeokHoon Kim ,  KunTack Lee ,  YongMyung Jun ,  Yong-Jhin Cho

    IPC: H01L21/02 ,  H01L21/308 ,  H01L21/67

    CPC classification number: H01L21/02101 ,  H01L21/3081 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67253

    Abstract: A method of manufacture and fluid supply system for treating a substrate is provided. The fluid supply system for treating a substrate may include a substrate dry part supplying a dry fluid to dry a rinse solution doped on a substrate; a dry fluid separation part retrieving a mixed fluid that the dry fluid and the rinse solution are mixed with each other during a dry process of the substrate from the substrate dry part and separating the dry fluid from the mixed fluid; and a dry fluid supply part resupplying the dry fluid separated from the dry fluid separation part to the substrate dry part.

    Abstract translation: 提供了一种用于处理基板的制造方法和流体供应系统。 用于处理基底的流体供应系统可以包括：供给干燥流体以干燥掺杂在基底上的漂洗溶液的基底干燥部分; 干燥流体分离部件，其在从所述基材干燥部分干燥所述基材的干燥过程期间将所述干燥流体和所述冲洗溶液彼此混合的混合流体，并将所述干燥流体与所述混合流体分离; 以及将干燥流体分离部分分离的干燥流体再供给到基板干燥部分的干燥流体供给部件。

    Manufacturing method and fluid supply system for treating substrate
    18.
    发明授权
    Manufacturing method and fluid supply system for treating substrate 有权
    用于处理基材的制造方法和流体供应系统

    公开(公告)号：US09524864B2

    公开(公告)日：2016-12-20

    申请号：US13762952

    申请日：2013-02-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-Min Oh ,  HyoSan Lee ,  YongSun Ko ,  KyoungSeob Kim ,  SeokHoon Kim ,  KunTack Lee ,  YongMyung Jun ,  Yong-Jhin Cho

    IPC: H01L21/02 ,  H01L21/67

    CPC classification number: H01L21/02101 ,  H01L21/3081 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67253

    Abstract: A method of manufacture and fluid supply system for treating a substrate is provided. The fluid supply system for treating a substrate may include a substrate dry part supplying a dry fluid to dry a rinse solution doped on a substrate; a dry fluid separation part retrieving a mixed fluid that the dry fluid and the rinse solution are mixed with each other during a dry process of the substrate from the substrate dry part and separating the dry fluid from the mixed fluid; and a dry fluid supply part resupplying the dry fluid separated from the dry fluid separation part to the substrate dry part.

    Abstract translation: 提供了一种用于处理基板的制造方法和流体供应系统。 用于处理基底的流体供应系统可以包括：供给干燥流体以干燥掺杂在基底上的漂洗溶液的基底干燥部分; 干燥流体分离部件，其在从所述基材干燥部分干燥所述基材的干燥过程期间将所述干燥流体和所述冲洗溶液彼此混合的混合流体，并将所述干燥流体与所述混合流体分离; 以及将干燥流体分离部分分离的干燥流体再供给到基板干燥部分的干燥流体供给部件。

    Method of removing chemicals from a substrate
    20.
    发明授权
    Method of removing chemicals from a substrate 有权

    公开(公告)号：US11227761B2

    公开(公告)日：2022-01-18

    申请号：US16881113

    申请日：2020-05-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ji-Hoon Jeong ,  Jung-Min Oh ,  Kun-Tack Lee ,  Hyo-San Lee

    IPC: H01L21/02 ,  H01L21/67

    Abstract: A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

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