公开(公告)号：US20140021511A1

公开(公告)日：2014-01-23

申请号：US13804188

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Kyoung-yeon KIM ,  Jong-seob KIM ,  Joon-yong KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA ,  Sun-kyu HWANG ,  In-jun HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/475 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.

Abstract translation: 根据示例实施例的高电子迁移率晶体管（HEMT）包括沟道层，沟道层上的沟道供应层，沟道层和沟道供应层中的至少一个上的源电极和漏电极，栅电极 源极电极和漏极电极之间，肖特基电极与沟道供给层形成肖特基接触。 通道供应层的上表面可以限定肖特基电极调节单元。 肖特基电极的至少一部分可以在肖特基电极调节单元中。 肖特基电极电连接到源电极。

公开(公告)号：US20150221745A1

公开(公告)日：2015-08-06

申请号：US14686436

申请日：2015-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-jun HWANG ,  Hyuk-soon Choi ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Ki-ha Hong ,  Jai-kwang Shin

IPC: H01L29/66 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/7787

Abstract: High electron mobility transistors (HEMTs) including a substrate and a HEMT stack on the substrate, the HEMT stack including a compound semiconductor layer that includes a 2-dimensional electron gas (2DEG), an upper compound semiconductor layer that has a polarization index higher than a polarization index of the compound semiconductor layer, and a source electrode, a drain electrode, and a gate that are disposed on the upper compound semiconductor layer. The substrate may be a nitride substrate that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of a silicon substrate. The substrate may include an insulating layer that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of the silicon substrate, a metal layer that is deposited on the insulating layer, and a plate that is attached to the metal layer.

Abstract translation: 包括衬底和衬底上的HEMT堆叠的高电子迁移率晶体管（HEMT），所述HEMT堆叠包括包含二维电子气（2DEG）的化合物半导体层，具有高于 化合物半导体层的极化指数，以及设置在上部化合物半导体层上的源电极，漏电极和栅极。 衬底可以是氮化物衬底，其具有高于介电常数和硅衬底的热导率的介电常数和导热系数。 衬底可以包括绝缘层，该绝缘层的介电常数和热导率高于介电常数和硅衬底的热导率，沉积在绝缘层上的金属层和附着到金属的板 层。

公开(公告)号：US20150123139A1

公开(公告)日：2015-05-07

申请号：US14258374

申请日：2014-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-seob KIM ,  In-jun HWANG ,  Jai-kwang SHIN ,  Jae-joon OH ,  Soo-gine CHONG ,  Sunk-yu HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/7787

Abstract: Provided are a high electron mobility transistor and/or a method of manufacturing the same. The high electron mobility transistor includes a channel layer, a channel supply layer formed on the channel layer to generate a two-dimensional electron gas (2DEG), a depletion forming layer formed on the channel supply layer, a gate electrode formed on the depletion forming layer, and a barrier layer formed between the depletion forming layer and the gate electrode. Holes may be prevented from being injected into the depletion forming layer from the gate electrode, thereby reducing a gate forward current.

Abstract translation: 提供高电子迁移率晶体管和/或其制造方法。 高电子迁移率晶体管包括沟道层，形成在沟道层上的沟道供应层，以产生二维电子气（2DEG），在沟道供应层上形成的耗尽形成层，形成于耗尽层上的栅电极 层，以及形成在耗尽形成层和栅电极之间的阻挡层。 可以防止孔从栅电极注入耗尽形成层，从而减小栅极正向电流。

公开(公告)号：US20150108547A1

公开(公告)日：2015-04-23

申请号：US14330072

申请日：2014-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-jun HWANG

IPC: H01L29/778

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer having a 2-dimensional electron gas (2DEG), a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer, at least one channel depletion layer on the channel supply layer; a gate electrode on at least a part of the channel depletion layer, and at least one bridge connecting the channel depletion layer and the source electrode. The channel depletion layer is configured to form a depletion region in the 2DEG. The HEMT has a ratio of a first impedance to a second impedance that is a uniform value. The first impedance is between the gate electrode and the channel depletion layer. The second impedance is between the source electrode and the channel depletion layer.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括具有二维电子气体（2DEG）的沟道层，沟道层上的沟道供应层，源电极和漏电极彼此间隔开 沟道层和沟道供应层中的一个，沟道供应层上的至少一个沟道耗尽层; 在沟道耗尽层的至少一部分上的栅电极，以及连接沟道耗尽层和源电极的至少一个桥。 通道耗尽层被配置为在2DEG中形成耗尽区。 HEMT具有作为均匀值的第一阻抗与第二阻抗的比率。 第一阻抗位于栅电极和沟道耗尽层之间。 第二阻抗位于源电极和沟道耗尽层之间。

公开(公告)号：US20140147973A1

公开(公告)日：2014-05-29

申请号：US13938580

申请日：2013-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuk-soon CHOI ,  Hong-Pyo HEO ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Jae-joon OH ,  In-jun HWANG

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/02 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/73 ,  H01L24/94 ,  H01L29/4175 ,  H01L29/7786 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05567 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16235 ,  H01L2224/73251 ,  H01L2224/81005 ,  H01L2224/94 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/023 ,  H01L2224/13

Abstract: A method of packaging power devices at a wafer level is disclosed. The method includes preparing a wafer having a plurality of nitride power devices thereon, each of the plurality of nitride power devices having a plurality of electrodes thereon; forming a polymer layer on the plurality of nitride power devices; exposing each of the electrodes from the polymer layer; forming a solder bump on the exposed electrodes; forming a molding layer covering the solder bump on the polymer layer; and removing the wafer and exposing the solder bump.

Abstract translation: 公开了一种在晶片级封装功率器件的方法。 该方法包括制备其上具有多个氮化物功率器件的晶片，所述多个氮化物功率器件中的每一个在其上具有多个电极; 在所述多个氮化物功率器件上形成聚合物层; 使聚合物层中的每一个电极露出; 在暴露的电极上形成焊料凸块; 形成覆盖聚合物层上的焊料凸点的成型层; 并移除晶片并暴露焊料凸块。

公开(公告)号：US20130307026A1

公开(公告)日：2013-11-21

申请号：US13752766

申请日：2013-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-kyu HWANG ,  Jai-kwang SHIN ,  Hyuk-soon CHOI ,  Jong-seob KIM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Kyoung-yeon KIM

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: According to example embodiments, High electron mobility transistors (HEMTs) may include a discontinuation region in a channel region. The discontinuation region may include a plurality of 2DEG unit regions that are spaced apart from one another. The discontinuation region may be formed at an interface between two semiconductor layers or adjacent to the interface. The discontinuation region may be formed by an uneven structure or a plurality of recess regions or a plurality of ion implantation regions. The plurality of 2DEG unit regions may have a nanoscale structure. The plurality of 2DEG unit regions may be formed in a dot pattern, a stripe pattern, or a staggered pattern.

Abstract translation: 根据示例实施例，高电子迁移率晶体管（HEMT）可以包括沟道区域中的不连续区域。 不连续区域可以包括彼此间隔开的多个2DEG单元区域。 不连续区域可以形成在两个半导体层之间或与界面相邻的界面处。 不连续区域可以由不平坦结构或多个凹陷区域或多个离子注入区域形成。 多个2DEG单元区域可以具有纳米尺度结构。 多个2DEG单元区域可以形成为点图案，条纹图案或交错图案。

公开(公告)号：US20130146890A1

公开(公告)日：2013-06-13

申请号：US13707162

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-jun HWANG ,  Jae-joon OH ,  Jae-won LEE ,  Hyo-ji CHOI ,  Jong-bong HA

IPC: H01L27/06 ,  H01L29/778

CPC classification number: H01L27/0629 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure.

Abstract translation: 根据示例实施例的高电子迁移率晶体管（HEMT）包括第一半导体层，第一半导体层上的第二半导体层和第二半导体层上的反向二极管栅极结构。 源极和漏极可以在第一半导体层和第二半导体层中的至少一个上。 栅电极可以在反向二极管栅极结构上。