公开(公告)号：US10671524B2

公开(公告)日：2020-06-02

申请号：US16173390

申请日：2018-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkwon Moon ,  Seung-Yeon Lee ,  Heewon Lee ,  In Hwan Doh ,  NamWook Kang

IPC: G06F12/02 ,  G06F3/06

Abstract: A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

公开(公告)号：US09286990B1

公开(公告)日：2016-03-15

申请号：US14677420

申请日：2015-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul Lee ,  Nam Wook Kang ,  In Hwan Doh ,  Chanik Park

IPC: G11C16/26 ,  G11C16/16 ,  G11C16/32

CPC classification number: G11C16/16 ,  G11C16/10 ,  G11C16/26 ,  G11C16/32 ,  G11C16/349

Abstract: A method of operating a storage device includes; counting a number of fast cycles for the memory block when a program interval between two successive program operations directed to memory cells of the memory block is less than a minimal program interval, and/or when an erase interval between two successive erase operations directed to the memory block is less than a minimal erase interval, and selecting the memory block to be erased by an erase operation or selecting memory cells of the memory block to be programmed by a program operation in response to the counted number of fast cycles for the memory block.

Abstract translation: 操作存储设备的方法包括： 当针对存储器块的存储器单元的两个连续程序操作之间的程序间隔小于最小程序间隔时，和/或当两个连续的擦除操作之间的擦除间隔指向 存储器块小于最小擦除间隔，并且通过擦除操作来选择要擦除的存储器块，或者响应于计数的存储器块的快速周期数，选择要由编程操作编程的存储器块的存储器单元 。