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公开(公告)号:US20220220379A1
公开(公告)日:2022-07-14
申请号:US17709830
申请日:2022-03-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeong Hee LEE , Eun Joo JANG , Hyun A KANG , Tae Hyung KIM
Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
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12.
公开(公告)号:US20190204673A1
公开(公告)日:2019-07-04
申请号:US16297051
申请日:2019-03-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Hyung KIM , Eun Joo JANG , Shin Ae JUN , Hyun A KANG , Yongwook KIM , Na Youn WON , Hyo Sook JANG
IPC: G02F1/1335 , F21V9/30 , F21V8/00 , G02F1/13357
CPC classification number: G02F1/133514 , F21V9/30 , G02B6/0026 , G02B6/0046 , G02B6/0051 , G02B6/0073 , G02F1/1336 , G02F1/133603 , G02F2001/133614 , H01L2224/48091 , H01L2924/00014
Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65
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公开(公告)号:US20180157124A1
公开(公告)日:2018-06-07
申请号:US15872595
申请日:2018-01-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yong Seok HAN , Nayoun WON , Hyun A KANG , Ha Il KWON , Shang Hyeun PARK , Eun Joo JANG , Shin Ae JUN , Deukseok CHUNG , Tae Won JEONG
IPC: G02F1/1335 , G02B5/20 , G03F7/00
CPC classification number: G02F1/133617 , G02B5/201 , G02B5/207 , G02F1/133504 , G02F1/133514 , G02F1/133615 , G02F1/133621 , G02F2001/133614 , G02F2202/36 , G03F7/0007
Abstract: A color filter including a first region configured to emit a first light, a second region configured to emit a second light having a longer wavelength than a wavelength of the first light, a third region configured to emit a third light having a longer wavelength than the wavelength of the second light, a first layer including two or more quantum dots, and a second layer formed on at least one surface of the first layer, wherein the first layer and the second layer are disposed in at least the second region and the third region.
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公开(公告)号:US20180031926A1
公开(公告)日:2018-02-01
申请号:US15707195
申请日:2017-09-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Na Youn WON , Hyun A KANG , Eun Joo JANG , Shin Ae JUN , Oul CHO
IPC: G02F1/1335 , C09K11/00 , F21V8/00
CPC classification number: G02F1/133615 , C09K11/00 , G02B6/005 , G02F2001/133614 , Y10S977/774
Abstract: A semiconductor nanocrystal composition including a semiconductor nanocrystal, an organic additive, and at least one polymerizable substance selected from a polymerizable monomer, a polymerizable oligomer, and a combination thereof, wherein the composition has haze of greater than or equal to about 40% after polymerization.
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公开(公告)号:US20170336674A1
公开(公告)日:2017-11-23
申请号:US15670399
申请日:2017-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyun A KANG , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN
IPC: G02F1/1335 , C09D123/08 , C09K11/88 , C09K11/56 , C09K11/70 , C08K9/08 , C09K11/02
Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least to two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.
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16.
公开(公告)号:US20170306228A1
公开(公告)日:2017-10-26
申请号:US15645107
申请日:2017-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyun A KANG , Eun Joo JANG , Young Hwan KIM , Shin Ae JUN , Hyo Sook JANG
IPC: C09K11/88 , C08G75/045 , C08L81/02 , C09K11/70 , H01L33/56 , H01L33/50 , C09K11/02 , B82Y30/00 , B82Y20/00
CPC classification number: C09K11/883 , B82Y20/00 , B82Y30/00 , C08G75/045 , C08G75/12 , C08L81/02 , C09K11/02 , C09K11/703 , H01L33/501 , H01L33/502 , H01L33/56 , H01L2933/0033 , H01L2933/0041 , H01L2933/005
Abstract: A composition comprising: a first monomer comprising at least three thiol groups, each located at a terminal end of the first monomer, wherein the first monomer is represented by the following Chemical Formula 1-1: a second monomer comprising at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer, wherein the second monomer is represented by the following Chemical Formula 2: wherein in Chemical Formulae 1 and 2 groups R2, Ra to Rd, Ya to Yd, L1′ and L2, X and variables k3 and k4 are the same as described in the specification, and a first light emitting particle, wherein the first light emitting particle consists of a semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, wherein the first light emitting particle has a core/shell structure having a first semiconductor nanocrystal being surrounded by a second semiconductor nanocrystal, and the first semiconductor nanocrystal being different from the second semiconductor nanocrystal.
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公开(公告)号:US20160070136A1
公开(公告)日:2016-03-10
申请号:US14822114
申请日:2015-08-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eun Joo JANG , Shin Ae JUN , Hyun A KANG
IPC: G02F1/1335
CPC classification number: G02F1/133514 , G02F1/133528 , G02F1/1336 , G02F1/133617 , G02F2001/133614 , G02F2201/086
Abstract: A photoluminescent liquid crystal display includes: a liquid crystal panel including a lower substrate, an upper substrate, a liquid crystal layer interposed between the upper and lower substrates, and a photoluminescent color filter layer disposed between the upper substrate and the liquid crystal layer; an optical device disposed on the upper substrate; a polarizing plate disposed under the lower substrate; and a backlight unit disposed under the polarizing plate and which emits blue light, where the photoluminescent color filter layer includes a first color filter which emits polarized red light, a second color filter which emits polarized green light, and a third color filter which emits polarized blue light, and the first color filter and the second color filter include a semiconductor nanocrystal-polymer composite.
Abstract translation: 光致发光液晶显示器包括:液晶板,包括下基板,上基板,插入在上基板和下基板之间的液晶层,以及设置在上基板和液晶层之间的光致发光滤色器层; 设置在上基板上的光学装置; 设置在下基板下方的偏光板; 以及背光单元,其设置在所述偏振板下方并发出蓝色光,其中所述光致发光滤色器层包括发射偏振红光的第一滤色器,发射偏振绿光的第二滤色器和发射偏振绿色光的第三滤色器 蓝色光,并且第一滤色器和第二滤色器包括半导体纳米晶体 - 聚合物复合材料。
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公开(公告)号:US20210198569A1
公开(公告)日:2021-07-01
申请号:US17203872
申请日:2021-03-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Hyung KIM , Hyun A KANG , Eun Joo JANG , Dae Young CHUNG
Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.
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19.
公开(公告)号:US20200248073A1
公开(公告)日:2020-08-06
申请号:US16851625
申请日:2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeong Hee LEE , Hyun A KANG , Sung Woo KIM , Jin A KIM , Tae Hyung KIM , Yuho WON , Eun Joo JANG
Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.
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公开(公告)号:US20190189945A1
公开(公告)日:2019-06-20
申请号:US15970296
申请日:2018-05-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dae Young CHUNG , Hyun A KANG , Eun Joo JANG , Oul CHO
CPC classification number: H01L51/502 , H01L33/06 , H01L33/26 , H01L33/502 , H01L51/0037 , H01L51/0052 , H01L51/0058 , H01L51/5056 , H01L51/5072 , H01L51/5076 , H01L51/5203
Abstract: An electroluminescent device and a display device including the same are provided. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including at least two light emitting particles; a hole transport layer disposed between the first electrode and the emission layer; and an electron transport layer disposed between the emission layer and the second electrode and including at least two different organic semiconductor compounds, wherein a first root-mean surface roughness of a surface of the electron transport layer obtained using a laser interferometer is in a range from about 0.5 nanometers to about 3 nanometers.
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