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    SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE SAME
    12.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20220336574A1

    公开(公告)日：2022-10-20

    申请号：US17854679

    申请日：2022-06-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Yeol KANG ,  Kyu Ho CHO ,  Han Jin LIM ,  Cheol Seong HWANG

    IPC: H01L49/02 ,  H01L27/108

    Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.

    SEMICONDUCTOR DEVICE
    13.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220231117A1

    公开(公告)日：2022-07-21

    申请号：US17714259

    申请日：2022-04-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Han Jin LIM ,  Ki Nam KIM ,  Hyung Suk JUNG ,  Kyoo Ho JUNG ,  Ki Hyun HWANG

    IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L27/11507

    Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

    SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC LAYER
    14.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC LAYER 审中-公开

    公开(公告)号：US20190027495A1

    公开(公告)日：2019-01-24

    申请号：US16142637

    申请日：2018-09-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ji Hoon CHOI ,  Sung Gil KIM ,  Seulye KIM ,  Jung Ho KIM ,  Hong Suk KIM ,  Phil Ouk NAM ,  Jae Young AHN ,  Han Jin LIM

    IPC: H01L27/11582 ,  H01L23/528 ,  H01L27/11565

    Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

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