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    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    11.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20210242320A1

    公开(公告)日：2021-08-05

    申请号：US17222474

    申请日：2021-04-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junghwan HUH ,  Dongchan KIM ,  Dae Hyun KIM ,  Euiju KIM ,  Jisoo LEE

    IPC: H01L29/423 ,  H01L29/78 ,  H01L29/51 ,  H01L29/49

    Abstract: A semiconductor device includes a substrate including an active region, a gate trench disposed in the substrate and crossing the active region; a gate dielectric layer disposed in the gate trench; a first gate electrode disposed on the gate dielectric layer and including center and edge portions; a second gate electrode disposed on the first gate electrode; a gate capping insulating layer disposed on the second gate electrode and filling the gate trench; and first and second impurity regions disposed in the substrate opposite to each other with respect to the gate trench. A top surface of each of the center and edge portions contacts a bottom surface of the second gate electrode. The top surface of the second gate electrode is concave. The bottom surface of the gate capping insulating layer is convex, and a side surface of the gate capping insulating layer contacts the gate dielectric layer.

    IMAGE SENSOR
    15.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240105745A1

    公开(公告)日：2024-03-28

    申请号：US18241478

    申请日：2023-09-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dongchan KIM ,  Chanho PARK ,  Hongkyu PARK ,  Byoungho KWON ,  Kyungrae BYUN ,  Minhwan JEON ,  Hwiyoung JEONG

    IPC: H01L27/146

    CPC classification number: H01L27/14625 ,  H01L27/14621

    Abstract: Provided is an image sensor including a sensor substrate, a spacer layer on the sensor substrate, and a color separating lens array on the spacer layer and configured to separate light based on a wavelength of the light, wherein the color separating lens array includes a first lens layer including a plurality of first nano posts and a first peripheral material layer around the plurality of first nano posts, a chemical mechanical polishing (CMP) stop layer on the first peripheral material layer, an etch stop layer on an upper surface of the CMP stop layer and directly on an upper surface of each first nano post of the plurality of first nano posts, and a second lens layer on the etch stop layer, the second lens layer including a plurality of second nano posts and a second peripheral material layer around the plurality of second nano posts.

    ELECTRONIC DEVICE AND OPERATING METHOD OF THE SAME
    16.
    发明申请
    ELECTRONIC DEVICE AND OPERATING METHOD OF THE SAME 有权

    公开(公告)号：US20220334670A1

    公开(公告)日：2022-10-20

    申请号：US17694155

    申请日：2022-03-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jinyoung HWANG ,  Dongchan KIM ,  Dongnam BYUN

    IPC: G06F3/041

    Abstract: Provided is a method of identifying a touch type of a user touch input with respect to an electronic device, the method including: obtaining touch data from a touch input received from a user; determining a touch recognition model set consisting of touch recognition models to be used to identify a touch type of the touch input of the user from among a plurality of touch recognition models corresponding to a plurality of partial time periods included in a time in which the touch input is maintained; obtaining touch type probability values with respect to the touch input of the user by applying the touch data to the touch recognition models included in the touch recognition model set; and identifying a touch type of the touch input, based on the obtained touch type probability values.

    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    17.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 审中-公开

    公开(公告)号：US20200152753A1

    公开(公告)日：2020-05-14

    申请号：US16523529

    申请日：2019-07-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junghwan HUH ,  Dongchan KIM ,  Dae Hyun KIM ,  Euiju KIM ,  Jisoo LEE

    IPC: H01L29/423 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51

    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a gate trench crossing an active region, and a gate structure in the gate trench. The gate structure includes a gate dielectric layer disposed on an inner wall of the gate trench, a gate electrode disposed on the gate electric layer and partially filling the gate trench, a gate capping insulating layer disposed on the gate electrode, and a gap-fill insulating layer disposed in the gate trench and disposed on the gate capping insulating layer. The gate capping insulating layer includes a material formed by oxidizing a portion of the gate electrode, nitriding the portion of the gate electrode, or oxidizing and nitriding the portion of the gate electrode.

    METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE
    18.
    发明申请
    METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE 有权
    形成半导体器件精细图案的方法

    公开(公告)号：US20160293445A1

    公开(公告)日：2016-10-06

    申请号：US15066492

    申请日：2016-03-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Je-Woo HAN ,  Junho YOON ,  Kyohyeok KIM ,  Dongchan KIM ,  Sungyeon KIM ,  Jaehong PARK ,  Jinyoung PARK ,  KyungYub JEON

    IPC: H01L21/311

    CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/76816

    Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming an target layer on a substrate, forming a mask pattern on a target layer, performing a first process to etch the target layer and form a first sub-trench, and performing a second process to further etch the target layer and form a second sub-trench. First and second sidewall patterns may be formed on a sidewall of the mask pattern to be used as an etch mask in the first and second processes, respectively. Outer sidewalls of the first and second sidewall patterns may be formed to have different angles with respect to a top surface of the substrate.

    Abstract translation: 公开了制造半导体器件的方法。 该方法可以包括在衬底上形成目标层，在目标层上形成掩模图案，执行蚀刻目标层并形成第一子沟槽的第一工艺，以及执行第二工艺以进一步蚀刻目标层和 形成第二子沟槽。 第一和第二侧壁图案可分别形成在掩模图案的侧壁上，以分别在第一和第二工艺中用作蚀刻掩模。 第一和第二侧壁图案的外侧壁可以形成为相对于基板的顶表面具有不同的角度。

    ELECTRONIC DEVICE FOR IDENTIFYING FORCE TOUCH AND METHOD FOR OPERATING SAME
    20.
    发明公开
    ELECTRONIC DEVICE FOR IDENTIFYING FORCE TOUCH AND METHOD FOR OPERATING SAME 审中-公开

    公开(公告)号：US20230359541A1

    公开(公告)日：2023-11-09

    申请号：US18224868

    申请日：2023-07-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dongnam BYUN ,  Dongchan KIM ,  Jinyoung HWANG

    IPC: G06F11/34 ,  G06F11/30

    CPC classification number: G06F11/3438 ,  G06F11/3041

    Abstract: A method of identifying, in an electronic device, a force associated with a touch input of a user is provided. The method includes receiving at least one touch input from the user; obtaining first feature information for the at least one touch input; obtaining a plurality of force touch models configured to identify force touch; obtaining second feature information for at least one touch input included in training data used to train the plurality of force touch models; determining, from among the plurality of force touch models, a force touch model based on a similarity between the second feature information and the first feature information; and identifying, based on the determined force touch model, a force touch for the at least one touch input of the user.

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