公开(公告)号：US12232371B2

公开(公告)日：2025-02-18

申请号：US18446874

申请日：2023-08-09

Applicant: Samsung Display Co., LTD.

Inventor： Yoon-Jong Cho ,  Seok Je Seong ,  Seong Jun Lee

IPC: H10K59/126 ,  G09G3/3208 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H10K50/86 ,  H10K59/12 ,  H10K59/121 ,  H10K59/131

Abstract: A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.

公开(公告)号：US11856823B2

公开(公告)日：2023-12-26

申请号：US17202604

申请日：2021-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Yoon-Jong Cho ,  Tetsuhiro Tanaka ,  Young-In Hwang

IPC: H10K59/126 ,  H10K59/131 ,  H10K59/121 ,  H01L27/12

CPC classification number: H10K59/126 ,  H10K59/1213 ,  H10K59/131 ,  H01L27/1214

Abstract: A display panel includes a first organic film layer, a first barrier layer disposed on first organic film layer, a shielding pattern disposed on the first barrier layer, a second barrier layer covering the shielding pattern and disposed on first barrier layer, a first active pattern disposed on the second barrier layer and overlapping the shielding pattern in a plan view, a gate electrode disposed on the first active pattern, an emission control line disposed on the first active pattern and adjacent to a first side of the gate electrode in the plan view, an upper compensation control line disposed on the emission control line and adjacent to a second side of gate electrode in the plan view, and a second active pattern disposed on the emission control line.

公开(公告)号：US11765946B2

公开(公告)日：2023-09-19

申请号：US18085749

申请日：2022-12-21

Applicant: Samsung Display Co., LTD.

Inventor： Yoon-Jong Cho ,  Seok Je Seong ,  Seong Jun Lee

IPC: H10K59/126 ,  G09G3/3233 ,  H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  G09G3/3208 ,  H10K50/86 ,  H10K59/12 ,  H10K59/131

CPC classification number: H10K59/126 ,  G09G3/3233 ,  H10K59/1213 ,  G09G3/3208 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2310/0254 ,  G09G2320/0238 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/04 ,  H01L29/7869 ,  H01L29/78672 ,  H01L29/78675 ,  H10K50/865 ,  H10K59/12 ,  H10K59/1216 ,  H10K59/131

Abstract: A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.

公开(公告)号：US20220384764A1

公开(公告)日：2022-12-01

申请号：US17713237

申请日：2022-04-05

Applicant: Samsung Display Co., Ltd.

Inventor： MINWOO WOO ,  Sungho Kim ,  Seokje Seong ,  Jinsung An ,  Haeyoung Yun ,  Seunghyun Lee ,  Wangwoo Lee ,  Jiseon Lee ,  Yoon-Jong Cho

IPC: H01L51/52 ,  H01L27/32

Abstract: A display panel includes a base layer, a circuit layer disposed on the base layer, a light-emitting element layer disposed on the circuit layer and including a light-emitting element having a pixel electrode, a light-emitting layer disposed on the pixel electrode, and a common electrode disposed on the light-emitting layer, an encapsulation layer disposed on the light-emitting element layer, and a pattern disposed between the circuit layer and the light-emitting element layer. At least a portion of the pattern may be disposed in a region adjacent to the light-emitting element, with respect to a plan view of the display panel.

公开(公告)号：US11515376B2

公开(公告)日：2022-11-29

申请号：US17063698

申请日：2020-10-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yoon-Jong Cho ,  Suyeon Yun ,  Seokje Seong ,  Seongjun Lee ,  Joonhoo Choi ,  Semyung Kwon ,  Kyunghyun Baek

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3225 ,  H01L51/52

Abstract: A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

公开(公告)号：US20160013222A1

公开(公告)日：2016-01-14

申请号：US14567980

申请日：2014-12-11

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Jin Park ,  Myung-Ho Kim ,  Jun-Hwan Moon ,  Keun-Chang Lee ,  Yoon-Jong Cho

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/50 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L51/0027 ,  H01L27/3248 ,  H01L29/4908 ,  H01L29/66757 ,  H01L2227/323

Abstract: A method of manufacturing a thin film transistor is disclosed. In one aspect, the method includes forming an active layer over a substrate and forming a gate insulating layer containing a dopant over the active layer. The method also includes irradiating laser light onto the gate insulating layer such that the dopant of the gate insulating layer diffuses into the active layer.

Abstract translation: 公开了制造薄膜晶体管的方法。 在一个方面，该方法包括在衬底上形成有源层，并在有源层上形成含有掺杂剂的栅极绝缘层。 该方法还包括将激光照射到栅极绝缘层上，使得栅极绝缘层的掺杂剂扩散到有源层中。