公开(公告)号：US09691982B2

公开(公告)日：2017-06-27

申请号：US14567980

申请日：2014-12-11

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Jin Park ,  Myung-Ho Kim ,  Jun-Hwan Moon ,  Keun-Chang Lee ,  Yoon-Jong Cho

IPC: H01L51/00 ,  H01L29/49 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L51/0027 ,  H01L27/3248 ,  H01L29/4908 ,  H01L29/66757 ,  H01L2227/323

Abstract: A method of manufacturing a thin film transistor is disclosed. In one aspect, the method includes forming an active layer over a substrate and forming a gate insulating layer containing a dopant over the active layer. The method also includes irradiating laser light onto the gate insulating layer such that the dopant of the gate insulating layer diffuses into the active layer.

公开(公告)号：US20160013222A1

公开(公告)日：2016-01-14

申请号：US14567980

申请日：2014-12-11

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Jin Park ,  Myung-Ho Kim ,  Jun-Hwan Moon ,  Keun-Chang Lee ,  Yoon-Jong Cho

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/50 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L51/0027 ,  H01L27/3248 ,  H01L29/4908 ,  H01L29/66757 ,  H01L2227/323

Abstract: A method of manufacturing a thin film transistor is disclosed. In one aspect, the method includes forming an active layer over a substrate and forming a gate insulating layer containing a dopant over the active layer. The method also includes irradiating laser light onto the gate insulating layer such that the dopant of the gate insulating layer diffuses into the active layer.

Abstract translation: 公开了制造薄膜晶体管的方法。 在一个方面，该方法包括在衬底上形成有源层，并在有源层上形成含有掺杂剂的栅极绝缘层。 该方法还包括将激光照射到栅极绝缘层上，使得栅极绝缘层的掺杂剂扩散到有源层中。