ORGANIC LIGHT EMITTING DIODE DISPLAY AND REPAIRING METHOD THEREOF
    16.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND REPAIRING METHOD THEREOF 有权
    有机发光二极管显示及其修复方法

    公开(公告)号:US20150102302A1

    公开(公告)日:2015-04-16

    申请号:US14312840

    申请日:2014-06-24

    Abstract: An organic light emitting diode display includes a substrate having a display unit and a peripheral portion, scan lines in a first direction, data lines in a second direction, pixels in the display unit and having pixel circuit portions and organic light emitting diodes, first dummy lines in the display unit and extending in the first direction, at least one second dummy line in the peripheral portion and extending in the second direction, dummy circuit portions connected to a first dummy line and the at least one second dummy line, driving pads connected to end portions of the data lines, at least one dummy driving pad connected to an end portion of the at least one second dummy line, and a driving circuit configured to transmit a data signal to the driving pads and to the at least one dummy driving pad.

    Abstract translation: 有机发光二极管显示器包括具有显示单元和外围部分的基板,沿第一方向的扫描线,第二方向的数据线,显示单元中的像素,并具有像素电路部分和有机发光二极管,第一虚拟 显示单元中的线并且沿第一方向延伸,周边部分中的至少一个第二虚拟线并沿第二方向延伸,连接到第一虚拟线和至少一个第二虚拟线的虚拟电路部分,连接的驱动焊盘 至少一个连接到所述至少一个第二虚拟线的端部的虚拟驱动焊盘和被配置为将数据信号传输到所述驱动焊盘和所述至少一个虚拟驱动的驱动电路的至少一个虚拟驱动焊盘 垫。

    Quantum well nanocrystals with quaternary alloy structure for improved light absorption

    公开(公告)号:US20210284907A1

    公开(公告)日:2021-09-16

    申请号:US17199613

    申请日:2021-03-12

    Abstract: A quantum dot, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes a template including a first semiconductor nanocrystal, a quantum well (e.g., quantum well layer) disposed on the template and a shell disposed on the quantum well, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), zinc (Zn), and a chalcogen element wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.

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