FLEXIBLE DISPLAY AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210288173A1

    公开(公告)日:2021-09-16

    申请号:US17329306

    申请日:2021-05-25

    Abstract: A substrate for a flexible display is disclosed. The substrate has a film stress range that does not affect an electronic device such as a thin film transistor, and includes a barrier layer having excellent oxygen and moisture blocking characteristics, and a method of manufacturing the substrate. The substrate includes; a plastic substrate having a glass transition temperature from about 350° C. to about 500° C.; and a barrier layer disposed on the plastic substrate, having a inti layer structure, wherein at least one silicon oxide layer and at least one silicon nitride layer are alternately stacked on each other, and having a film stress from about −200 MPa to about 200 MPa due to the at least one silicon oxide layer and the at least one silicon nitride layer.

    FLEXIBLE DISPLAY AND METHOD OF MANUFACTURING THE SAME
    14.
    发明申请
    FLEXIBLE DISPLAY AND METHOD OF MANUFACTURING THE SAME 审中-公开
    柔性显示及其制造方法

    公开(公告)号:US20130341629A1

    公开(公告)日:2013-12-26

    申请号:US13975054

    申请日:2013-08-23

    Abstract: A substrate for a flexible display is disclosed. The substrate has a film stress range that does not affect an electronic device such as a thin film transistor, and includes a barrier layer having excellent oxygen and moisture blocking characteristics, and a method of manufacturing the substrate. The substrate includes: a plastic substrate having a glass transition temperature from about 350° C. to about 500° C.; and a barrier layer disposed on the plastic substrate, having a multi-layer structure, wherein at least one silicon oxide layer and at least one silicon nitride layer are alternately stacked on each other, and having a film stress from about −200 MPa to about 200 MPa due to the at least one silicon oxide layer and the at least one silicon nitride layer.

    Abstract translation: 公开了一种用于柔性显示器的基板。 基板具有不影响诸如薄膜晶体管的电子器件的膜应力范围,并且包括具有优异的氧气和湿气阻隔特性的阻挡层,以及制造该基板的方法。 衬底包括:玻璃化转变温度为约350℃至约500℃的塑料衬底; 以及设置在所述塑料基板上的阻挡层,具有多层结构,其中至少一个氧化硅层和至少一个氮化硅层彼此交替堆叠,并且膜应力为约-200MPa至约 由于至少一个氧化硅层和至少一个氮化硅层,200MPa。

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