LIGHT EMITTING DISPLAY DEVICE
    13.
    发明申请

    公开(公告)号:US20220246710A1

    公开(公告)日:2022-08-04

    申请号:US17408534

    申请日:2021-08-23

    Abstract: An embodiment provides a light emitting display device, including a display panel including a display area, wherein the display area of the display panel includes: a transparent display area; an intermediate display area that is disposed at one side or both sides of the transparent display area along a first direction and includes a pixel circuit part for a transparent display area; and a normal display area, and wherein the transparent display area includes: a first anode; and a transmission transistor that transmits an emission current outputted from the pixel circuit part for the transparent display area to the first anode.

    ORGANIC LIGHT EMITTING DIODE DISPLAY

    公开(公告)号:US20210097937A1

    公开(公告)日:2021-04-01

    申请号:US17118903

    申请日:2020-12-11

    Abstract: An organic light emitting diode display includes a first transistor disposed on a substrate and including a gate electrode, an input electrode, and an output electrode, a second transistor electrically connected to a scan line, a data line, and the input electrode of the first transistor, a third transistor including a gate electrode, a first electrode electrically connected to the output electrode of the first transistor, and a second electrode electrically connected to the gate electrode of the first transistor, and an overlapping layer that overlaps the gate electrode of the third transistor in a plan view. The overlapping layer is disposed between the substrate and a semiconductor layer of the third transistor.

    PIXEL AND DISPLAY DEVICE USING THE SAME

    公开(公告)号:US20220392405A1

    公开(公告)日:2022-12-08

    申请号:US17891877

    申请日:2022-08-19

    Abstract: A pixel includes: an organic light emitting diode; a first transistor including a gate that is connected to a first node, wherein the first transistor is connected between a second node and a third node; a second transistor including a gate that is connected to a corresponding scan line, wherein the second transistor is connected between a data line and the second node; a storage capacitor connected between the first node and a first voltage; a third transistor including a gate that is connected to the corresponding scan line, the third transistor is connected between the first node and the third node; and a fourth transistor connected between a first end of the first transistor and a second voltage.

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20200373335A1

    公开(公告)日:2020-11-26

    申请号:US16991245

    申请日:2020-08-12

    Abstract: A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a semiconductor, a source electrode, and a drain electrode that are disposed on a same layer as one another. The semiconductor is between the source electrode and the drain electrode. The thin film transistor array panel further includes a buffer layer disposed between the semiconductor and the substrate and including an inorganic insulating material. The first edge of the buffer layer is substantially parallel to an adjacent edge of the semiconductor, a second edge of the buffer layer is substantially parallel to an adjacent edge of the source electrode, and a third edge of the buffer layer is substantially parallel to an adjacent edge of the drain electrode.

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