Abstract:
A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.
Abstract:
A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.
Abstract:
The TFT substrate includes a gate electrode disposed on an insulating substrate; a gate insulating layer disposed on the gate electrode; a source/drain electrode disposed on the gate insulating layer; and an oxide semiconductor layer disposed between the gate insulating layer and the source/drain electrode. The oxide semiconductor layer includes a first portion that does not contact the source/drain electrode and in which a channel region is defined and a second portion in which a contact region that contacts the source/drain electrode is defined. The second portion includes a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first oxide semiconductor layer.
Abstract:
A design for a scan driver and a display device including the scan driver that is more resilient to electrostatic discharge. Thin film transistors within a stage are designed differently depending on whether or not a gate of the transistor is connected to an external source. Transistors whose gate is connected to an external source is specially designed to withstand electrostatic discharge applied to the gate thereof by one or more of increasing a number of channel areas, decreasing a length of an ohmic bridge, including a resistive element to the gate, decreasing a width of a channel areas, and increasing a width of the active layer.
Abstract:
A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.
Abstract:
A display device includes a substrate, a semiconductor layer on the substrate, a first insulating layer on the semiconductor layer, a first conductive layer on the semiconductor layer, a second insulating layer on the first conductive layer, a first contact hole penetrating the first insulating layer and the second insulating layer, a second conductive layer on the second insulating layer, connected to the semiconductor layer through the first contact hole, and including a hydrogen barrier material, and a third insulating layer on the second conductive layer.
Abstract:
According to an embodiment of the disclosure, a display device is provided. The display device includes a base layer including a display area and a peripheral area, a light emitting element disposed in the display area and including a first electrode, a second electrode, and a light emitting part disposed between the first electrode and the second electrode, an electrode disconnection member disposed in the peripheral area, and an electrode portion disposed adjacent to the electrode disconnection member. The electrode disconnection member includes a reverse-taper member surrounding an area in a plan view. The reverse-taper member includes an inner edge facing the area. The electrode portion includes a first electrode portion disposed in the area and a second electrode portion disposed on an upper surface of the reverse-taper member along the inner edge. The first electrode portion and the second electrode portion are physically spaced apart from each other.
Abstract:
A display device and a method of fabricating the same are provided. The display device comprises a substrate, a transistor disposed on the substrate, a via layer disposed over the transistor and including a contact hole extending to the transistor, a pixel electrode disposed on the via layer and connected to the transistor through the contact hole, a first bank layer disposed on the pixel electrode and extending in a first direction, and a second bank layer extended in a second direction crossing the first direction, a light emitting layer disposed on the pixel electrode, and a common electrode disposed on the light emitting layer, wherein the second bank layer comprises a first region that does not overlap the contact hole and a second region that overlaps the contact hole, and wherein a width of the second region is greater than a width of the first region.
Abstract:
A display device includes a first substrate including an emission area and a non-emission area; a first pixel electrode positioned on the emission area of the first substrate; a first light emitting structure positioned on the first pixel electrode and including quantum dots; a pixel defining layer positioned on the non-emission area of the first substrate and positioned on the first pixel electrode; a common electrode covering the first light emitting structure and the pixel defining layer; and an encapsulation structure positioned on the common electrode and in contact with the common electrode such that the encapsulation structure overlaps the non-emission area. The encapsulation structure may include a second substrate and a hydrogen donor layer positioned between the second substrate and the common electrode. The hydrogen donor layer may overlap the emission area and may be in contact with or spaced apart from the common electrode.
Abstract:
Disclosed herein is an organic light emitting diode display, including: an insulating substrate including a display area in which a plurality of pixels are formed and a peripheral area positioned around the display area; a touch signal transfer wiring positioned in the peripheral area on the insulating substrate; an insulating layer formed on the insulating substrate, the insulating layer covering the touch signal transfer wiring and including a protrusion and an opening through which the touch signal transfer wiring is partially exposed; a connection conductor connected to the touch signal transfer wiring through the opening; an encapsulation substrate including a touch area corresponding to the display area and a peripheral area positioned around the touch area; a touch electrode layer positioned under the touch area of the encapsulation substrate; and a touch wiring connected to the touch electrode layer and positioned under the peripheral area of the encapsulation substrate.