公开(公告)号：US09524667B2

公开(公告)日：2016-12-20

申请号：US14038594

申请日：2013-09-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hai-Jung In ,  Jung-Bae Kim ,  Bo-Yong Chung

IPC: G09G3/30 ,  G09G3/32

CPC classification number: G09G3/3233 ,  G09G3/3208 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2300/0876 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2310/061 ,  G09G2320/043 ,  G09G2320/045

Abstract: A pixel circuit for an organic light emitting diode (OLED) display is disclosed. One inventive aspect includes an organic light emitting diode, a first transistor, a storage unit, a second transistor and a third transistor. The first transistor controls the amount of current flowing from a first power source coupled to a second power source via a second node and the organic light emitting diode in response to a voltage at a first node. The storage unit is connected to a data line, and stores a data signal from the data line. The second transistor is connected to a fourth node and the first node and is turned on when a second control signal is supplied. The third transistor is connected to the first node and a third node and is turned on when a third control signal is supplied.

Abstract translation: 公开了一种用于有机发光二极管（OLED）显示器的像素电路。 本发明的一个方面包括有机发光二极管，第一晶体管，存储单元，第二晶体管和第三晶体管。 第一晶体管响应于第一节点处的电压控制经由第二节点耦合到第二电源的第一电源和有机发光二极管的电流量。 存储单元连接到数据线，并存储来自数据线的数据信号。 第二晶体管连接到第四节点和第一节点，并且当提供第二控制信号时被接通。 第三晶体管连接到第一节点和第三节点，并且当提供第三控制信号时被接通。

公开(公告)号：US20150123084A1

公开(公告)日：2015-05-07

申请号：US14231263

申请日：2014-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung-Bae Kim ,  Dong-Kyu Kim ,  Bo-Yong Chung

IPC: H01L27/32

CPC classification number: H01L27/326 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L27/3276

Abstract: A thin film transistor array substrate includes: a substrate; a bottom gate electrode including a gate area doped with ion impurities and undoped areas on left and right sides of the gate area; an active layer on the bottom gate electrode with a first insulating layer therebetween and including a source contact region, a drain contact region, and an oxide semiconductor region; a top gate electrode on the active layer with a second insulating layer therebetween; and a source electrode in contact with the source contact region and a drain electrode in contact with the drain contact region, the source electrode and the drain electrode being on the top gate electrode with a third insulating layer therebetween. The oxide semiconductor region is between the source contact region and the drain contact region.

Abstract translation: 薄膜晶体管阵列基板包括：基板; 底栅电极，其包括掺杂有离子杂质的栅极区域和在栅极区域的左侧和右侧的未掺杂区域; 底栅电极上的有源层，其间具有第一绝缘层，并且包括源极接触区域，漏极接触区域和氧化物半导体区域; 有源层上的顶栅电极，其间具有第二绝缘层; 以及与所述源极接触区域接触的源极电极和与所述漏极接触区域接触的漏极电极，所述源极电极和所述漏极电极位于所述顶部栅极电极上，在其间具有第三绝缘层。 氧化物半导体区域在源极接触区域和漏极接触区域之间。

公开(公告)号：US08916878B2

公开(公告)日：2014-12-23

申请号：US13797670

申请日：2013-03-12

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Bae Kim ,  Yong-Sung Park ,  Wang-Jo Lee ,  Hae-Yeon Lee ,  Keum-Nam Kim

IPC: G09G3/32 ,  H01L27/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/52 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/786

Abstract: A thin film transistor includes a substrate, a gate electrode on the substrate, an active layer spaced from the gate electrode, a source electrode and a drain electrode spaced from the gate electrode and coupled to the active layer, a gate wiring at a same layer as the gate electrode and coupled to the gate electrode, and first conductive members electrically coupled to, and overlapping, the gate wiring.

Abstract translation: 薄膜晶体管包括衬底，衬底上的栅电极，与栅极间隔开的有源层，与栅电极间隔开并耦合到有源层的源电极和漏极电极，位于相同层的栅极布线 作为栅极并且耦合到栅电极，以及第一导电构件，其电耦合到栅极布线并与栅极布线重叠。

公开(公告)号：US11049978B2

公开(公告)日：2021-06-29

申请号：US16553240

申请日：2019-08-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung-Bae Kim

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

公开(公告)号：US10580800B2

公开(公告)日：2020-03-03

申请号：US15791492

申请日：2017-10-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Bae Kim ,  Bo-Yong Chung ,  Hai-Jung In ,  Dong-Gyu Kim

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L27/32

Abstract: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a first insulating layer covering the substrate and the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the semiconductor layer, a second insulating layer covering the first gate electrode and the first insulating layer, a second gate electrode on the second insulating layer and overlapping the semiconductor layer and the first gate electrode, a third insulating layer covering the second gate electrode, a first contact hole defined in the first insulating layer, the second insulating layer and the third insulating layer, and through which a portion of the semiconductor layer is exposed, and a source electrode and a drain electrode connected to the semiconductor layer through the first contact hole.

公开(公告)号：US09818766B2

公开(公告)日：2017-11-14

申请号：US14055039

申请日：2013-10-16

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Bae Kim ,  Bo-Yong Chung ,  Hai-Jung In ,  Dong-Gyu Kim

IPC: H01L29/08 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/124 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/78645

Abstract: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a first insulating layer covering the substrate and the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the semiconductor layer, a second insulating layer covering the first gate electrode and the first insulating layer, a second gate electrode on the second insulating layer and overlapping the semiconductor layer and the first gate electrode, a third insulating layer covering the second gate electrode, a first contact hole defined in the first insulating layer, the second insulating layer and the third insulating layer, and through which a portion of the semiconductor layer is exposed, and a source electrode and a drain electrode connected to the semiconductor layer through the first contact hole.

公开(公告)号：US09698279B2

公开(公告)日：2017-07-04

申请号：US14516889

申请日：2014-10-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung-Bae Kim

IPC: H01L29/08 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

公开(公告)号：US09601056B2

公开(公告)日：2017-03-21

申请号：US14250742

申请日：2014-04-11

Applicant: Samsung Display Co., Ltd.

Inventor： Bo-Yong Chung ,  Hai-Jung In ,  Jung-Bae Kim

IPC: G09G3/32

CPC classification number: G09G3/3258 ,  G09G3/3233 ,  G09G2300/0852 ,  G09G2300/0861

Abstract: A pixel includes an organic light emitting diode (OLED) having a cathode electrode coupled to a second power supply, a pixel circuit configured to control an amount of current supplied to the OLED to correspond to a previous data signal, and a driver configured to store a present data signal supplied from a data line and to supply the previous data signal to the pixel circuit. The OLED, pixel circuit, and driver may be controlled by signals in a frame that includes first through fourth periods, the second power supply may be set to a first voltage in the first and second periods and to a second voltage in the third and fourth periods, and the first voltage may be a voltage at which the OLED does not emit light and the second voltage may be a voltage at which the OLED emits light.

公开(公告)号：US20150021591A1

公开(公告)日：2015-01-22

申请号：US14133307

申请日：2013-12-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Bae Kim ,  Bo-Yong Chung ,  Hae-Yeon Lee ,  Hai-Jung In

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78645

Abstract: A thin film transistor is disclosed. In one aspect, the thin film transistor includes a substrate, a semiconductor layer formed on the substrate, and a first gate electrode substantially overlapping the semiconductor layer with a gate insulating layer interposed therebetween. The thin film transistor also includes a second gate electrode substantially overlapping the first gate electrode with an interlayer insulating layer interposed therebetween, and a source electrode and a drain electrode electrically connected to the semiconductor layer, wherein the first gate electrode is electrically connected to the second gate electrode.

Abstract translation: 公开了一种薄膜晶体管。 在一个方面，薄膜晶体管包括基板，形成在基板上的半导体层，以及基本上与半导体层重叠的第一栅电极和介于其间的栅极绝缘层。 薄膜晶体管还包括基本上与第一栅电极重叠的第二栅电极和插入其间的层间绝缘层，以及电连接到半导体层的源电极和漏电极，其中第一栅电极电连接到第二栅电极 栅电极。

公开(公告)号：US20140333512A1

公开(公告)日：2014-11-13

申请号：US14038594

申请日：2013-09-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hai-Jung In ,  Jung-Bae Kim ,  Bo-Yong Chung

IPC: G09G3/32

CPC classification number: G09G3/3233 ,  G09G3/3208 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2300/0876 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2310/061 ,  G09G2320/043 ,  G09G2320/045

Abstract: A pixel circuit for an organic light emitting diode (OLED) display is disclosed. One inventive aspect includes an organic light emitting diode, a first transistor, a storage unit, a second transistor and a third transistor. The first transistor controls the amount of current flowing from a first power source coupled to a second power source via a second node and the organic light emitting diode in response to a voltage at a first node. The storage unit is connected to a data line, and stores a data signal from the data line. The second transistor is connected to a fourth node and the first node and is turned on when a second control signal is supplied. The third transistor is connected to the first node and a third node and is turned on when a third control signal is supplied.

Abstract translation: 公开了一种用于有机发光二极管（OLED）显示器的像素电路。 本发明的一个方面包括有机发光二极管，第一晶体管，存储单元，第二晶体管和第三晶体管。 第一晶体管响应于第一节点处的电压控制经由第二节点耦合到第二电源的第一电源和有机发光二极管的电流量。 存储单元连接到数据线，并存储来自数据线的数据信号。 第二晶体管连接到第四节点和第一节点，并且当提供第二控制信号时被接通。 第三晶体管连接到第一节点和第三节点，并且当提供第三控制信号时被接通。