公开(公告)号：US10461143B2

公开(公告)日：2019-10-29

申请号：US16111210

申请日：2018-08-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Hyun Park ,  Sang Kyung Lee ,  Jong Moo Huh

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A transistor substrate may include a base substrate, a data line, a conductive layer, a semiconductor layer, a gate electrode, and a pixel electrode. The data line may directly contact the base substrate. The conductive layer may directly contact the base substrate and may be spaced from the data line. The semiconductor layer may overlap the conductive layer, may be spaced from the conductive layer, and may include a source electrode and a drain electrode. The source electrode may be electrically connected to the data line. The gate electrode may overlap the semiconductor layer. The pixel electrode may be electrically connected to the drain electrode.