Invention Grant
- Patent Title: Transistor substrate, display device, and method of manufacturing the transistor substrate
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Application No.: US16111210Application Date: 2018-08-24
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Publication No.: US10461143B2Publication Date: 2019-10-29
- Inventor: Jae Hyun Park , Sang Kyung Lee , Jong Moo Huh
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2016-0126170 20160930
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L51/56 ; H01L51/52 ; H01L27/12 ; H01L29/786 ; H01L29/66

Abstract:
A transistor substrate may include a base substrate, a data line, a conductive layer, a semiconductor layer, a gate electrode, and a pixel electrode. The data line may directly contact the base substrate. The conductive layer may directly contact the base substrate and may be spaced from the data line. The semiconductor layer may overlap the conductive layer, may be spaced from the conductive layer, and may include a source electrode and a drain electrode. The source electrode may be electrically connected to the data line. The gate electrode may overlap the semiconductor layer. The pixel electrode may be electrically connected to the drain electrode.
Public/Granted literature
- US20180366532A1 TRANSISTOR SUBSTRATE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE TRANSISTOR SUBSTRATE Public/Granted day:2018-12-20
Information query
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