METHOD OF MANUFACTURING CAPACITOR, METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE CAPACITOR, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD
    11.
    发明申请
    METHOD OF MANUFACTURING CAPACITOR, METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE CAPACITOR, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD 有权
    制造电容器的方法,制造包括电容器的有机发光显示装置的方法和使用该方法制造的有机发光显示装置

    公开(公告)号:US20140326963A1

    公开(公告)日:2014-11-06

    申请号:US14059857

    申请日:2013-10-22

    Abstract: A method of manufacturing an organic light emitting display device includes: providing a capacitor on a substrate; providing a protection layer on the capacitor; providing an organic light emitting diode on the protection layer; and providing an encapsulation layer which encapsulates the organic light emitting diode. The providing the capacitor includes: providing a bottom electrode including an oxide semiconductor, on the substrate; providing an insulation layer on the substrate and overlapping the bottom electrode; annealing the bottom electrode to increase a carrier density of the bottom electrode; and providing an intermediate electrode on the insulation layer and overlapping the bottom electrode.

    Abstract translation: 一种制造有机发光显示装置的方法包括:在基板上设置电容器; 在电容器上提供保护层; 在保护层上提供有机发光二极管; 并提供封装有机发光二极管的封装层。 提供电容器包括:在基板上提供包括氧化物半导体的底部电极; 在衬底上提供绝缘层并与底部电极重叠; 对底部电极进行退火以增加底部电极的载流子密度; 并在绝缘层上提供中间电极并与底部电极重叠。

    Method of manufacturing capacitor, method of manufacturing organic light emitting display device including the capacitor, and organic light emitting display device manufactured by using the method
    14.
    发明授权
    Method of manufacturing capacitor, method of manufacturing organic light emitting display device including the capacitor, and organic light emitting display device manufactured by using the method 有权
    制造电容器的方法,制造包括电容器的有机发光显示装置的方法,以及使用该方法制造的有机发光显示装置

    公开(公告)号:US09112188B2

    公开(公告)日:2015-08-18

    申请号:US14059857

    申请日:2013-10-22

    Abstract: A method of manufacturing an organic light emitting display device includes: providing a capacitor on a substrate; providing a protection layer on the capacitor; providing an organic light emitting diode on the protection layer; and providing an encapsulation layer which encapsulates the organic light emitting diode. The providing the capacitor includes: providing a bottom electrode including an oxide semiconductor, on the substrate; providing an insulation layer on the substrate and overlapping the bottom electrode; annealing the bottom electrode to increase a carrier density of the bottom electrode; and providing an intermediate electrode on the insulation layer and overlapping the bottom electrode.

    Abstract translation: 一种制造有机发光显示装置的方法包括:在基板上设置电容器; 在电容器上提供保护层; 在保护层上提供有机发光二极管; 并提供封装有机发光二极管的封装层。 提供电容器包括:在基板上提供包括氧化物半导体的底部电极; 在衬底上提供绝缘层并与底部电极重叠; 对底部电极进行退火以增加底部电极的载流子密度; 并在绝缘层上提供中间电极并与底部电极重叠。

    Organic light-emitting display device
    15.
    发明授权
    Organic light-emitting display device 有权
    有机发光显示装置

    公开(公告)号:US09105862B2

    公开(公告)日:2015-08-11

    申请号:US14010164

    申请日:2013-08-26

    Abstract: An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

    Abstract translation: 公开了一种有机发光显示装置,其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 有机发光显示装置可以包括例如薄膜晶体管(TFT),其包括栅电极,与栅电极绝缘的有源层,与栅电极绝缘的源电极和漏电极,并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

    Thin film transistor, method of manufacturing the same and flat panel display device having the same
    16.
    发明授权
    Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
    薄膜晶体管,其制造方法和具有该薄膜晶体管的平板显示装置

    公开(公告)号:US08659016B2

    公开(公告)日:2014-02-25

    申请号:US13889752

    申请日:2013-05-08

    CPC classification number: H01L29/7869 H01L29/78606

    Abstract: A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    Abstract translation: 使用氧化物半导体作为有源层的薄膜晶体管(TFT),TFT的制造方法以及具有TFT的平板显示装置包括:形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中,界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性,因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙,所以物理地防止了电荷俘获。

    Display device including a semiconductor layer having a region with a widened width

    公开(公告)号:US11765936B2

    公开(公告)日:2023-09-19

    申请号:US17334980

    申请日:2021-05-31

    CPC classification number: H10K59/1213 H01L27/1222 H01L29/78696

    Abstract: A display device according to an embodiment includes: a first conductive layer that is disposed on a substrate; a transistor that is disposed on the substrate; and a light emitting element that is electrically connected to the transistor, wherein the transistor includes a semiconductor layer that at least partially overlaps the first conductive layer and is disposed on the first conductive layer, and a gate electrode that is disposed on the semiconductor layer. The semiconductor layer includes a first region that does not overlap the first conductive layer, a third region that overlaps the first conductive layer, and a second region that is disposed between the first region and the third region and traverses an edge of the first conductive layer. The first width of the semiconductor layer in the first region is smaller than a second width of the semiconductor layer in the second region.

    Display device
    18.
    发明授权

    公开(公告)号:US11626461B2

    公开(公告)日:2023-04-11

    申请号:US17338577

    申请日:2021-06-03

    Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

    Display device
    19.
    发明授权

    公开(公告)号:US11056551B2

    公开(公告)日:2021-07-06

    申请号:US16556166

    申请日:2019-08-29

    Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

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