公开(公告)号：US20210202655A1

公开(公告)日：2021-07-01

申请号：US17079278

申请日：2020-10-23

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Min CHO ,  Tae Wook KANG ,  Sang Gun CHOI ,  Shin Il CHOI ,  Yun Jung OH ,  Myoung Geun CHA

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

公开(公告)号：US20170038623A1

公开(公告)日：2017-02-09

申请号：US15228549

申请日：2016-08-04

Applicant: Samsung Display Co. Ltd.

Inventor： Joo Hyung LEE ,  Shin Il CHOI ,  Kyeong Su KO ,  Dong Il KIM ,  Jong Mo YEO

IPC: G02F1/1368 ,  H01L21/308 ,  H01L21/3213 ,  H01L29/417 ,  H01L27/12

Abstract: A liquid crystal display device includes a substrate; a gate electrode on the substrate; a semiconductor pattern layer on the gate electrode; and source and drain electrodes on the semiconductor pattern layer and spaced apart from each other. The source electrode includes: a first facing portion facing the drain electrode; and a first protrusion protruding toward the drain electrode from the first protrusion. The drain electrode includes: a second facing portion facing the source electrode; and a second protrusion protruding toward the source electrode from the second facing portion and facing the first protrusion. The semiconductor pattern layer includes: a source area overlapping the source electrode; a drain area overlapping the drain electrode; and a bridge area connecting the source area with the drain area, and a space defined between the first protrusion and the second protrusion is on the bridge area.

Abstract translation: 液晶显示装置包括：基板; 基板上的栅电极; 栅电极上的半导体图案层; 以及半导体图案层上的源电极和漏电极并彼此间隔开。 源电极包括：面向漏电极的第一面对部分; 以及从所述第一突起朝所述漏电极突出的第一突起。 漏电极包括：面对源电极的第二面对部分; 以及从所述第二面对部朝向所述源电极突出并面对所述第一突起的第二突起。 半导体图案层包括：与源电极重叠的源极区域; 漏极区域与漏电极重叠; 以及将源区域与排水区域连接的桥接区域，并且在第一突起部和第二突起部之间限定的空间在桥区域上。

公开(公告)号：US20160170521A1

公开(公告)日：2016-06-16

申请号：US14712953

申请日：2015-05-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Shin Il CHOI ,  Jae Neung KIM ,  Su Bin BAE ,  Yu-Gwang JEONG

IPC: G06F3/044 ,  C23F1/00 ,  G06F1/16

CPC classification number: G06F3/044 ,  G06F2203/04103 ,  G06F2203/04111 ,  G06F2203/04112

Abstract: A transparent electrode pattern includes a first electrode including a first lower conductive layer and a first upper conductive layer located on the first lower conductive layer and a second electrode spaced apart from the first electrode and including a second lower conductive layer and a second upper conductive layer positioned on the second lower conductive layer. The first and second lower conductive layers may include a metal nanowire. The first and second upper conductive layers may include a transparent conductive material that is dry-etchable.

Abstract translation: 透明电极图案包括第一电极，其包括第一下导电层和位于第一下导电层上的第一上导电层和与第一电极间隔开的第二电极，并且包括第二下导电层和第二上导电层 位于第二下导电层上。 第一和第二下导电层可以包括金属纳米线。 第一和第二上导电层可以包括可干蚀刻的透明导电材料。

公开(公告)号：US20240397773A1

公开(公告)日：2024-11-28

申请号：US18791102

申请日：2024-07-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Min CHO ,  Tae Wook KANG ,  Sang Gun CHOI ,  Shin Il CHOI ,  Yun Jung OH ,  Myoung Geun CHA

IPC: H10K59/131 ,  H10K50/824 ,  H10K59/121 ,  H10K59/124 ,  H10K71/00

Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

公开(公告)号：US20230387096A1

公开(公告)日：2023-11-30

申请号：US18233190

申请日：2023-08-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Bin BAE ,  Yu Gwang JEONG ,  Shin Il CHOI ,  Joon Geol LEE ,  Sang Gab KIM

IPC: H01L25/16 ,  H01L33/20 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L25/075 ,  H01L21/306 ,  H01L33/00

CPC classification number: H01L25/167 ,  H01L33/20 ,  H01L33/44 ,  H01L33/54 ,  H01L27/124 ,  H01L25/0753 ,  H01L21/30621 ,  H01L33/005 ,  H01L2933/005 ,  H01L33/62

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

公开(公告)号：US20220005799A1

公开(公告)日：2022-01-06

申请号：US17479928

申请日：2021-09-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Bin BAE ,  Yu Gwang JEONG ,  Shin Il CHOI ,  Joon Geol LEE ,  Sang Gab KIM

IPC: H01L25/16 ,  H01L33/20 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L25/075 ,  H01L21/306 ,  H01L33/00

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

公开(公告)号：US20200233136A1

公开(公告)日：2020-07-23

申请号：US16714763

申请日：2019-12-15

Applicant: Samsung Display Co., LTD.

Inventor： Chang Ok KIM ,  Chul Min BAE ,  Ji Hye HAN ,  Tae Wook KANG ,  Yong Seok KIM ,  Shin Il CHOI

IPC: F21V8/00

Abstract: A light unit including: a light source; and an optical member that transmits and converts light emitted from the light source, wherein the optical member includes: a light guide; a low refractive index layer that is disposed on the light guide and has a lower refractive index than that of the light guide; a first capping layer that is disposed on the low refractive index layer; and a wavelength conversion layer that is disposed on the first capping layer and includes quantum dots, and the light guide includes a transparent metal oxide.

公开(公告)号：US20200091393A1

公开(公告)日：2020-03-19

申请号：US16691495

申请日：2019-11-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Su Bin BAE ,  Yu Gwang JEONG ,  Shin Il CHOI ,  Joon Geol LEE ,  Sang Gab KIM

IPC: H01L33/62 ,  H01L33/00 ,  H01L21/306

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

公开(公告)号：US20200075707A1

公开(公告)日：2020-03-05

申请号：US16409991

申请日：2019-05-13

Applicant: Samsung Display Co., Ltd.

Inventor： Kyeong Su KO ,  Joon Geol LEE ,  Shin Il CHOI ,  Sang Gab KIM ,  Hyun Min CHO ,  Hyun Eok SHIN

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/00 ,  H01L51/05

Abstract: An OLED display according to an exemplary embodiment includes: a substrate; a gate insulation layer that is disposed on the substrate; and a gate wire that is disposed on the gate insulation layer, and includes a gate electrode, wherein the gate wire includes a single layer of aluminum or an aluminum alloy, and an angle formed by side surfaces of the gate wire and the gate insulation layer is less than 65°.

公开(公告)号：US20170278873A1

公开(公告)日：2017-09-28

申请号：US15461401

申请日：2017-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Sung Hoon YANG ,  Shin Il CHOI

IPC: H01L27/12 ,  H01L29/417 ,  H01L21/4763 ,  H01L29/66 ,  H01L21/465 ,  H01L23/535 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/465 ,  H01L21/47635 ,  H01L23/535 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78669 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode and includes a channel layer comprising an oxide semiconductor and an auxiliary layer comprising amorphous silicon. The source electrode and the drain electrode are separated from each other and connected to the semiconductor layer. A thin film transistor array panel and method of manufacturing same also is disclosed.