公开(公告)号：US10658405B2

公开(公告)日：2020-05-19

申请号：US16213038

申请日：2018-12-07

Applicant: SONY CORPORATION

Inventor： Keiji Tatani ,  Tomoharu Ogita ,  Takashi Nagano

IPC: H01L27/146 ,  H04N5/232 ,  H04N5/369 ,  H04N5/3745 ,  H04N9/04 ,  H04N5/374 ,  H04N5/378

Abstract: The present disclosure relates to a solid-state image sensor, an electronic apparatus and an imaging method by which specific processing other than normal processing can be sped up with reduced power consumption.The solid-state image sensor includes a pixel outputting a pixel signal used to construct an image and a logic circuit driving the pixel, and is configured of a stacked structure in which a first semiconductor substrate including a plurality of the pixels and a second semiconductor substrate including the logic circuit are joined together. In addition, among the plurality of pixels, a specific pixel is connected to the logic circuit independently of a normal pixel, the specific pixel being the pixel that outputs the pixel signal used in the specific processing other than imaging processing in which the image is imaged. The present technology can be applied to a stacked solid-state image sensor, for example.

公开(公告)号：US10438983B2

公开(公告)日：2019-10-08

申请号：US15072538

申请日：2016-03-17

Applicant: Sony Corporation

Inventor： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC: H01L31/02 ,  H01L27/146 ,  H01L27/148

Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

公开(公告)号：US20170047365A1

公开(公告)日：2017-02-16

申请号：US15337291

申请日：2016-10-28

Applicant: Sony Corporation

Inventor： Keiji Tatani ,  Fumihiko Koga ,  Takashi Nagano

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

Abstract translation: 固体摄像器件包括第一导电型半导体阱区，多个像素，每个像素形成在半导体阱区上，由光电转换部和像素晶体管组成，元件隔离区设置在 像素和像素中的元件隔离区域以及不含绝缘膜的元件隔离区域，并且设置在期望的像素晶体管之间。

公开(公告)号：US11127771B2

公开(公告)日：2021-09-21

申请号：US16169735

申请日：2018-10-24

Applicant: SONY CORPORATION

Inventor： Yusuke Tanaka ,  Toshifumi Wakano ,  Keiji Tatani ,  Takashi Nagano ,  Hayato Iwamoto ,  Keiichi Nakazawa ,  Tomoyuki Hirano ,  Shinpei Yamaguchi ,  Shunsuke Maruyama

IPC: H01L27/148 ,  H01L27/146

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

公开(公告)号：US10090343B2

公开(公告)日：2018-10-02

申请号：US15337291

申请日：2016-10-28

Applicant: Sony Corporation

Inventor： Keiji Tatani ,  Fumihiko Koga ,  Takashi Nagano

IPC: H01L27/148 ,  H01L27/146

Abstract: A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.