公开(公告)号：US12114518B2

公开(公告)日：2024-10-08

申请号：US17511706

申请日：2021-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Chan Su Kim ,  Tae Ho Kim ,  Kun Su Park ,  Eun Joo Jang ,  Jin A Kim ,  Tae Hyung Kim ,  Jeong Hee Lee

IPC: H10K50/11 ,  H10K30/10 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K85/60

CPC classification number: H10K50/11 ,  H10K30/10 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K85/649

Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.

公开(公告)号：US11661550B2

公开(公告)日：2023-05-30

申请号：US17543197

申请日：2021-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: C09K11/88 ,  C09K11/56 ,  H01L51/50

CPC classification number: C09K11/883 ,  C09K11/565 ,  H01L51/502

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

公开(公告)号：US11566345B2

公开(公告)日：2023-01-31

申请号：US16281232

申请日：2019-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: B32B5/16 ,  B05D7/00 ,  B82Y20/00 ,  C30B29/48 ,  C01G9/08 ,  H01L51/50 ,  H01L33/28 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/06 ,  B82Y40/00

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US11563143B2

公开(公告)日：2023-01-24

申请号：US16998262

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok Han ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  C09K11/88 ,  C01B19/04

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US10954440B2

公开(公告)日：2021-03-23

申请号：US16298108

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Sung Woo Kim ,  Jin A Kim ,  Jeong Hee Lee ,  Tae Hyung Kim ,  Eun Joo Jang

IPC: H01L51/50 ,  C09K11/88 ,  C09K11/02 ,  H05B33/14 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US11981851B2

公开(公告)日：2024-05-14

申请号：US18054687

申请日：2022-11-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang ,  Yong Seok Han ,  Heejae Chung

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2002/01 ,  C01P2002/74 ,  C01P2004/30 ,  C01P2004/64 ,  C01P2004/80

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US11566176B2

公开(公告)日：2023-01-31

申请号：US16851495

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyo Sook Jang ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang ,  Yong Seok Han

IPC: C09K11/88 ,  H01L33/00 ,  H01L33/28 ,  H01L33/06

Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.

公开(公告)号：US11462547B2

公开(公告)日：2022-10-04

申请号：US16991738

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Sun Young Lee ,  Yong Kwan Kim ,  Ji Young Kim ,  Chang Hyun Cho

IPC: H01L27/108 ,  H01L21/66

Abstract: A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is provided. A gate structure disposed in the core area is provided, and a core capping film disposed on the gate structure is provided. A height of the core capping film is greater than a height of the bit line structure. A first contact film is formed on the bit line structure. A second contact film is formed on the core capping film. A mask is formed on the first contact film. An upper surface of the core capping film is exposed using the mask. The first contact film is etched until a height of the first contact film becomes less than a height of the bit line structure using an etching process. In the etching process, an etching rate for the first contact film is greater than etching rates for the bit line structure and the core capping film.

公开(公告)号：US11180694B2

公开(公告)日：2021-11-23

申请号：US16851625

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyun A Kang ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/88 ,  C01B19/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/50 ,  B82Y30/00

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR  Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

公开(公告)号：US11011720B2

公开(公告)日：2021-05-18

申请号：US16298357

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Sung Woo Kim ,  Jin A Kim ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Oul Cho

IPC: H01L51/50 ,  H01L51/00 ,  C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/52 ,  H01L51/56

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.