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    Image sensor
    12.
    发明授权
    Image sensor 有权

    公开(公告)号：US12249610B2

    公开(公告)日：2025-03-11

    申请号：US17647348

    申请日：2022-01-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jiyoun Song ,  Ingyu Baek ,  Daehoon Kim ,  Seungsik Kim

    IPC: H01L27/146 ,  H04N25/53 ,  H04N25/77

    Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces, transistors on the first surface, first and second lower pad electrodes apart from each other on a first interlayer insulating film covering the transistors, a mold insulating layer on the first and second lower pad electrodes, a first lower electrode inside a first opening passing through the mold insulating layer on the first lower pad electrode, a second lower electrode inside a second opening passing through the mold insulating layer on the second lower pad electrode, a dielectric film and an upper electrode on the first and second lower electrodes, a first contact plug passing through the mold insulating layer and connected to the first lower pad electrode, and a second contact plug passing through the mold insulating layer and connected to the second lower pad electrode.

    IMAGE SENSOR
    13.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240321930A1

    公开(公告)日：2024-09-26

    申请号：US18612450

    申请日：2024-03-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jeongsoon Kang ,  Gyunha Park ,  Daehoon Kim ,  Jongeun Park ,  Gwideokryan Lee ,  Dongseok Cho

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627

    Abstract: Provided is an image sensor including a first substrate including a first surface to which light is incident and a second surface opposite the first surface, a second substrate facing the second surface of the first substrate, a wiring layer between the first substrate and the second substrate and including an insulating layer and a conductive structure in the insulating layer, a first floating diffusion region provided in the first substrate, a first through electrode penetrating through the second substrate and electrically connected to the first floating diffusion region through the conductive structure, a second floating diffusion region provided in the second substrate, and a landing pad arranged on a bottom surface of the second substrate and electrically connected to the second floating diffusion region, wherein a bottom surface of the first through electrode may be in contact with the landing pad.

    Terminal method and device for switching antenna in real-time
    14.
    发明授权
    Terminal method and device for switching antenna in real-time 有权

    公开(公告)号：US12009601B2

    公开(公告)日：2024-06-11

    申请号：US16965789

    申请日：2019-02-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Daehoon Kim ,  Bongjin Kim ,  Taekyoung Kim ,  Jongho Oh

    IPC: H01Q3/24 ,  H01Q1/24 ,  H04M1/72 ,  H04M1/72454

    CPC classification number: H01Q3/24 ,  H01Q1/243 ,  H04M1/72454 ,  H04M2250/12

    Abstract: The present disclosure relates to a communication technique for converging IoT technology with a 5G communication system for supporting a higher data transmission rate beyond a 4G system, and a system therefor. The present disclosure may be applied to an intelligent service (for example, a smart home, a smart building, a smart city, a smart car or connected car, health care, digital education, retail business, a security and safety-related service, etc.) on the basis of 5G communication technology and IoT-related technology. The present invention proposes a method and a device, of a terminal using a millimeter wave, for selecting an antenna in order to transmit/receive a signal in a next-generation communication system. According to the present invention, the terminal may select, on the basis of information acquired from a sensor, an antenna having no physical contact or positioned in a relatively high position.

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