Abstract:
A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.
Abstract:
An image sensor includes a first color separation element configured to separate an incident light, the incident light being separated into a mixture of a first color light and a third color light, and separated into a second color light; and a sensor array unit including a plurality of pixels configured to sense the separated incident light, the sensor array including a first pixel region and a second pixel region that are alternately arranged in a first direction and a second direction, the second direction crossing the first direction, wherein a stack of a first light sensing layer configured to sense the first color light and a third light sensing layer configured to sense the third color light is provided in the first pixel region, and a second light sensing layer configured to sense the second color light is provided in the second pixel region.
Abstract:
A thermal radiation sensor may include a thermal absorption layer, an optical resonator surrounding the thermal absorption layer, and a plasmonic absorber provided on the thermal absorption layer, and thus, the thermal radiation sensor may have high sensitivity and may be miniaturized.
Abstract:
Provided are an image sensor including a color separating lens array and an electronic apparatus. The image sensor includes: a sensor substrate including a plurality of first pixels and a plurality of second pixels, wherein each of the first pixels includes a plurality of photosensitive cells that are two-dimensionally arranged in a first direction and a second direction, and, a first pixel of a first group includes a first edge region and a second edge region that are arranged at opposite edges of the first pixel in the first direction and outputs first and second photosensitive signals with respect to the light incident on the first and second edge regions.
Abstract:
An image sensor is provided for obtaining an ultra-high resolution image. The image sensor includes a plurality of two-dimensionally arranged pixels, each of the plurality of pixels including a first meta-photodiode that selectively absorbs light of a red wavelength band, a second meta-photodiode that selectively absorbs light in a green wavelength band, and a third meta-photodiode that selectively absorbs light of a blue wavelength band. A width of each of the plurality of pixels of the image sensor may be less than a diffraction limit.
Abstract:
An image sensor includes: a sensor substrate including a plurality of first pixels and a plurality of second pixels; a spacer layer on the sensor substrate; and a color separating lens array on the spacer layer and changing condensing light of a first wavelength on each of the first pixels and condensing light of a second wavelength on each of the second pixels. The color separating lens array includes a first color separating lens array layer including a plurality of first nanoposts, a first dielectric material layer arranged among the plurality of first nanoposts, and a plurality of first etch prevention patterns arranged respectively under the plurality of first nanoposts.
Abstract:
An image sensor includes a plurality of pixels, where each of the plurality of pixels includes a photoelectric conversion layer and a color routing meta-structure layer provided on the photoelectric conversion layer, where a first center line passing through a center of a lower surface and a center of an upper surface of a first color routing meta-structure layer of a first pixel among the plurality of pixels is inclined with respect to a second center line passing through a center of a lower surface and a center of an upper surface of a second color routing meta-structure layer of a second pixel among the plurality of pixels and where at least one of the first center line and the second center line is inclined with respect to an optical axis of the image sensor.
Abstract:
Provided is an image sensor including a sensor substrate including a plurality of first pixels configured to sense first wavelength light in an infrared ray band and a plurality of second pixels configured to sense second wavelength light in a visible light band, and a color separating lens array disposed on the sensor substrate and configured to change a phase of the first wavelength light incident on the color separating lens array such that the first wavelength light is condensed to the plurality of first pixels, wherein the color separating lens array includes a plurality of light condensing regions configured to condense the first wavelength light respectively on the plurality of first pixels, and wherein an area of each of the plurality of light condensing regions is larger than an area of each of the plurality of first pixels.
Abstract:
Provided is an image sensor including a sensor substrate including a plurality of first pixels configured to sense first wavelength light in an infrared ray band and a plurality of second pixels configured to sense second wavelength light in a visible light band, and a color separating lens array disposed on the sensor substrate and configured to change a phase of the first wavelength light incident on the color separating lens array such that the first wavelength light is condensed to the plurality of first pixels, wherein the color separating lens array includes a plurality of light condensing regions configured to condense the first wavelength light respectively on the plurality of first pixels, and wherein an area of each of the plurality of light condensing regions is larger than an area of each of the plurality of first pixels.
Abstract:
Provided is a method of forming an amorphous titanium dioxide (TiO2) thin film on a substrate using a low temperature atomic layer deposition method, the method of forming an amorphous TiO2 thin film including supplying a titanium (Ti) precursor to the substrate provided in a process chamber to adsorb the Ti precursor on the substrate, forming a Ti precursor film on the substrate by exposing the Ti precursor to the substrate where the Ti precursor is not adsorbed, supplying an oxygen (O2) precursor to the Ti precursor film and reacting the O2 precursor with the Ti precursor film, and forming the TiO2 thin film on the substrate by exposing the O2 precursor to the Ti precursor film that has not reacted with the O2 precursor, and reacting the Ti precursor film with the O2 precursor.