公开(公告)号：US20210081339A1

公开(公告)日：2021-03-18

申请号：US16570021

申请日：2019-09-13

Applicant: QUALCOMM Incorporated

Inventor： Ying DUAN ,  Shih-Wei CHOU ,  Mansoor Basha SHAIK ,  Harry DANG ,  Abhay DIXIT

IPC: G06F13/20 ,  H02H9/04 ,  H03K3/023

Abstract: In certain aspects, a device comprises one or more IO inputs; a first receiver coupled to a first supply voltage and the one or more IO inputs, wherein the first receiver comprises thick oxide transistors; and a high-speed circuit comprising: an isolation block coupled to the one or more IO inputs, wherein the isolation block comprises thick oxide transistors; and a second receiver coupled to the isolation block and a second supply voltage, wherein the second receiver comprises thin oxide transistors.