公开(公告)号：US11658403B2

公开(公告)日：2023-05-23

申请号：US17002594

申请日：2020-08-25

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Daniel Daeik Kim ,  Paragkumar Ajaybhai Thadesar ,  Nosun Park ,  Sameer Sunil Vadhavkar

IPC: H01Q9/04 ,  H01Q1/38 ,  H01Q13/02 ,  H01Q21/28 ,  H04B3/52 ,  H04B3/56

CPC classification number: H01Q1/38 ,  H01Q13/02 ,  H01Q21/28 ,  H04B3/52 ,  H04B3/56

Abstract: A substrate that includes at least one dielectric layer, a plurality of interconnects, and a curved antenna coupled to a surface of the substrate. The curved antenna is curved relative to the surface of the substrate such that at least part of the curved antenna is offset from the surface of the substrate. The substrate includes a first antenna dielectric layer coupled to the surface of the substrate, an antenna ground interconnect coupled to the first antenna dielectric layer, and a second antenna dielectric layer coupled to the antenna ground interconnect. The antenna ground interconnect configured to be coupled to ground. The curved antenna is coupled to the second antenna dielectric layer.

公开(公告)号：US11515247B2

公开(公告)日：2022-11-29

申请号：US17149006

申请日：2021-01-14

Applicant: QUALCOMM Incorporated

Inventor： Nosun Park ,  Changhan Hobie Yun ,  Daniel Daeik Kim ,  Sameer Sunil Vadhavkar ,  Paragkumar Ajaybhai Thadesar

IPC: H01L23/52 ,  H01L23/522 ,  H01L21/70 ,  H01L27/01

Abstract: A device includes a main capacitor composed of a first plate of a first back-end-of-line (BEOL) metallization layer, a main insulator layer on the first plate, and a second plate on the main insulator layer. The second plate is composed of a second BEOL metallization layer. The device includes a first tuning capacitor of a first portion of a first BEOL interconnect trace coupled to the first plate of the main capacitor through first BEOL sideline traces. The first tuning capacitor is composed of a first insulator layer on a surface and sidewalls of the first portion of the first BEOL interconnect trace. The first tuning capacitor includes a second BEOL interconnect trace on a surface and sidewalls of the first insulator layer. The device includes a first via capture pad coupled to the second BEOL interconnect trace of the first tuning capacitor.