Single photon avalanche diode based optical sensor, event-based vision sensor and operating method thereof

    公开(公告)号:US12117339B1

    公开(公告)日:2024-10-15

    申请号:US18464304

    申请日:2023-09-11

    CPC classification number: G01J1/44 G01J2001/4466

    Abstract: There is provided an optical sensor including an SPAD pixel array, multiple counters and a processor. The multiple counters count photon events of the SPAD pixel array to output an event-based vision sensor (EVS) frame per EVS period. The processor determines an index state of each pixel of the SPAD pixel array by comparing a counting value of each pixel respectively at a predetermined number of checking points with two predetermined thresholds, and calculates an index change of the index state associated with each pixel between adjacent EVS frames. The processor further changes the EVS period and/or adds a count offset to the counting value of each pixel to improve sensitivity of the event-based vision sensor.

    Avalanche diode based detection device

    公开(公告)号:US12085677B2

    公开(公告)日:2024-09-10

    申请号:US17735547

    申请日:2022-05-03

    Inventor: Tso-Sheng Tsai

    CPC classification number: G01S7/487 G01S7/4865 G01S17/04

    Abstract: There is provided a detection device including a light source, an avalanche diode, a first counter, a second counter and a processor. The light source emits light within a first interval, and is turned off within a second interval, a third interval and a fourth interval. The avalanche diode detects photons corresponding to the first interval, second, third and fourth intervals to trigger avalanche events. The first counter performs up-counting on the avalanche events in the first interval and performs down-counting on the avalanche events in the third interval to generate a first count value. The second counter performs up-counting on the avalanche events in the second interval and performs down-counting on the avalanche events in the fourth interval to generate a second count value. The processor calculates a time-of-flight according to the first count value and the second count value.

    Image sensor employing avalanche diode and pixel circuit and operating method thereof

    公开(公告)号:US11575854B2

    公开(公告)日:2023-02-07

    申请号:US17378843

    申请日:2021-07-19

    Inventor: Tso-Sheng Tsai

    Abstract: There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and four P-type or N-type transistors. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits.

    Time-of-flight device using two light modulation frequencies and operating method thereof

    公开(公告)号:US12210100B2

    公开(公告)日:2025-01-28

    申请号:US18198814

    申请日:2023-05-17

    Abstract: There is provided a distance measurement device including a light source, a light detector, a time control circuit and a processor. In first measurement, the time control circuit controls the light source to illuminate at a low modulation frequency, and the processor calculates a rough flying time according to a first detection signal of the light detector to determine an operating phase zone and a delay time. In second measurement, the time control circuit controls the light source to illuminate at a high modulation frequency and causes a light driving signal of the light source and a detecting control signal of the light detector to have a difference of the delay time, and the processor calculates a fine flying time according to a second detection signal of the light detector.

    Image sensor with controlled SPAD avalanche

    公开(公告)号:US12028636B2

    公开(公告)日:2024-07-02

    申请号:US17943579

    申请日:2022-09-13

    Inventor: Tso-Sheng Tsai

    Abstract: There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode (SPAD) and a floating diffusion. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits. The floating diffusion is used to record a voltage of one photon event detected by the SPAD in an exposure period.

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