公开(公告)号：US20200319822A1

公开(公告)日：2020-10-08

申请号：US16431672

申请日：2019-06-04

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Wei-Jeng Wang

IPC: G06F3/06 ,  G06F12/06

Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory control method includes: determining a first management unit as a source block and reading valid data from a first continuous data unit in the first management unit according to first interleaving information and second interleaving information, wherein the first interleaving information reflects a total number of the first continuous data units in the first management unit, and the second interleaving information reflects a total number of second continuous data units in a second management unit; storing the valid data into a recycling block; and erasing the first management unit.

公开(公告)号：US20200301851A1

公开(公告)日：2020-09-24

申请号：US16414768

申请日：2019-05-16

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Ding-Yuan Chen

IPC: G06F12/1036 ,  G06F12/02 ,  G06F12/12

Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: maintaining first management information for identifying a first management unit in the rewritable non-volatile memory module; collecting first valid data from the first management unit according to the first management information without reading first mapping information from the rewritable non-volatile memory module in a data merge operation, and the first mapping information includes logical-to-physical mapping information related to the first valid data; and storing the collected first valid data into a recycling unit.

公开(公告)号：US10545700B2

公开(公告)日：2020-01-28

申请号：US16004444

申请日：2018-06-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Wen-Jin Li

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/10 ,  G06F12/02

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.

公开(公告)号：US20190317694A1

公开(公告)日：2019-10-17

申请号：US16004444

申请日：2018-06-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Wen-Jin Li

IPC: G06F3/06 ,  G06F12/10

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.