公开(公告)号：US10545700B2

公开(公告)日：2020-01-28

申请号：US16004444

申请日：2018-06-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Wen-Jin Li

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/10 ,  G06F12/02

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.

公开(公告)号：US20190317694A1

公开(公告)日：2019-10-17

申请号：US16004444

申请日：2018-06-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Wen-Jin Li

IPC: G06F3/06 ,  G06F12/10

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.