公开(公告)号：US11163694B2

公开(公告)日：2021-11-02

申请号：US16414768

申请日：2019-05-16

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Ding-Yuan Chen

IPC: G06F12/02 ,  G06F12/10 ,  G06F12/1036 ,  G06F12/12

Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: maintaining first management information for identifying a first management unit in the rewritable non-volatile memory module; collecting first valid data from the first management unit according to the first management information without reading first mapping information from the rewritable non-volatile memory module in a data merge operation, and the first mapping information includes logical-to-physical mapping information related to the first valid data; and storing the collected first valid data into a recycling unit.

公开(公告)号：US20200301851A1

公开(公告)日：2020-09-24

申请号：US16414768

申请日：2019-05-16

Applicant: PHISON ELECTRONICS CORP.

Inventor： Che-Yueh Kuo ,  Ding-Yuan Chen

IPC: G06F12/1036 ,  G06F12/02 ,  G06F12/12

Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: maintaining first management information for identifying a first management unit in the rewritable non-volatile memory module; collecting first valid data from the first management unit according to the first management information without reading first mapping information from the rewritable non-volatile memory module in a data merge operation, and the first mapping information includes logical-to-physical mapping information related to the first valid data; and storing the collected first valid data into a recycling unit.