Abstract:
A semiconductor device includes a semiconductor substrate and low dielectric film wiring line laminated structure portions which are provided in regions on the semiconductor substrate except a peripheral portion thereof. Each of the laminated structure portions has a laminated structure of low dielectric films and a plurality of wiring lines. An insulating film is provided on an upper side of the laminated structure portion. Connection pad portions for electrodes are arranged on the insulating film to be electrically connected to the connection pad portions of uppermost wiring lines of the laminated structure portion. Bump electrodes for external connection are provided on the connection pad portions for the electrodes. A sealing film is provided on the insulating film and on the peripheral portion of the semiconductor substrate. Side surfaces of the laminated structure portions are covered with the insulating film or the sealing film.
Abstract:
A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.
Abstract:
A valve drive device which can prevent a locknut fixing a stem nut to a drive sleeve from getting loosened. The valve drive device comprises: the stem nut for screwing a valve stem thereinto; the drive sleeve engaging with a male spline formed on a peripheral outer surface of said stem nut, said drive sleeve including a worm gear on a peripheral outer surface thereof; a worm in meshing engagement with said worm gear; and a housing that supports said drive sleeve by bearings. The valve drive device further comprises: a stem nut fastening member having a first male screw that engages with a female screw provided on a peripheral inner surface of said drive sleeve; and a locknut that engages with a second male screw provided on a reduced diameter portion of said stem nut fastening member, said second male screw having a reverse screw thread relative to said first male screw, so that no slack may arise between said stem nut fastening member and said drive sleeve.
Abstract:
A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the pump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film.
Abstract:
A recording and reproducing apparatus for reproducing information recorded on a recording medium concurrently while recording the information, includes a compression section, a temporary storage section, a reproducing process section, and a storage section. The compression section reads the information recorded on the recording medium and compresses read information. The temporary storage section stores compressed information provided by the compression process. The reproducing process section decompresses the compressed information output thereto from the temporary storage section and reproduces decompressed information. The storage section stores the compressed information output thereto from the temporary storage section.
Abstract:
A semiconductor device includes a semiconductor structure including a semiconductor substrate having an integrated circuit portion, and a plurality of connecting pads connected to the integrated circuit portion. A plurality of distributing lines are formed on the semiconductor structure, connected to the connecting pads, and have connecting pad portions. An encapsulating layer made of a resin is formed on the semiconductor structure and upper surface of the distributing lines. A copper oxide layer is formed on at least a surface of each of the distributing lines except for the connecting pad portion.
Abstract:
The present invention relates to a process for the catalytic reduction of nitrogen oxides contained in exhaust gases from combustion, which process comprises bringing said exhaust gases into contact with a Beta Zeolite exchanged with suitable amounts of cobalt salts, in the presence of a light hydrocarbon as the reducing agent. The present invention relates also to a catalyst for such a process, which catalyst comprises a Beta zeolite exchanged with cobalt salts, characterized by a Co: zeolite AL molar ratio of
Abstract:
According to this invention, a stereo voice transmission apparatus for coding and decoding voice signals input from a plurality of input units includes a discriminating means for discriminating a single utterance mode from a multiple simultaneous utterance mode, a first coding means for coding the voice signal when the discriminating means discriminates the single utterance mode, a first decoding means for decoding voice information coded by the first coding means, a plurality of second coding means, arranged in correspondence with the plurality of input units, for coding the voice signals when the discriminating means discriminates the multiple simultaneous utterance mode, and a plurality of second decoding means, arranged in correspondence with the plurality of second coding means, for decoding pieces of voice information respectively coded by the plurality of second coding means.
Abstract:
In a fuel cell power generation system for use with a fuel gas which is prepared by desulfurizing a raw fuel material such as naphtha, LPG, town gas, or the like and then, processing it by steam reforming reaction and thus, consists mainly of hydrogen or a process of producing the fuel gas, the desulfurization of the raw fuel material is implemented using a copper/zinc desulfurizing agent. As a result of the desulfurization, the raw fuel material is desulfurized at a higher level and the deterioration of a steam reforming catalyst employed is prevented. Accordingly, steady long-run operation of the fuel cell will be ensured. Also, upon the steam reforming reaction, the S/C (the mole number of steam per one mole of carbon in a raw fuel material) is reduced and thus, the concentration of hydrogen in the fuel gas will be increased providing an improvement in the efficiency of power generation.
Abstract:
The present invention provides (1) a process for producing a desulfurization agent which comprises subjecting to hydrogen reduction a copper oxide-zinc oxide mixture prepared by co-precipitation process using a copper compound and a zinc compound; and (2) a process for producing a high temperature-resistant, high grade desulfurization agent which comprises subjecting to hydrogen reduction a copper oxide-zinc oxide-aluminum oxide mixture prepared by a co-precipitation process using a copper compound, a zinc compound and an aluminum compound.