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    Methods For Processing a Workpiece Using Fluorine Radicals
    13.
    发明申请
    Methods For Processing a Workpiece Using Fluorine Radicals 有权

    公开(公告)号：US20210066085A1

    公开(公告)日：2021-03-04

    申请号：US17001728

    申请日：2020-08-25

    Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

    Inventor： Qi Zhang ,  Xinliang Lu

    IPC: H01L21/3065 ,  G03F7/42 ,  H01J37/32

    Abstract: Methods for processing a workpiece with fluorine radicals are provided. In one example implementation, the method includes a workpiece having at least one silicon layer and at least one silicon germanium layer. The method can include placing the workpiece on a workpiece support in a processing chamber. The method can include generating one or more species from a process gas in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can include exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer.

    Air Leak Detection In Plasma Processing Apparatus With Separation Grid
    15.
    发明申请
    Air Leak Detection In Plasma Processing Apparatus With Separation Grid 审中-公开

    公开(公告)号：US20200245444A1

    公开(公告)日：2020-07-30

    申请号：US16258744

    申请日：2019-01-28

    Applicant: Mattson Technology, Inc.

    Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

    IPC: H05H1/00 ,  H01J37/32 ,  G01N21/00

    Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

    Ozone Treatment for Selective Silicon Nitride Etch Over Silicon
    16.
    发明申请
    Ozone Treatment for Selective Silicon Nitride Etch Over Silicon 审中-公开

    公开(公告)号：US20200234969A1

    公开(公告)日：2020-07-23

    申请号：US16744403

    申请日：2020-01-16

    Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

    Inventor： Shanyu Wang ,  Ting Xie ,  Chun Yan ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

    IPC: H01L21/311 ,  H01J37/32

    Abstract: Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.

    Processing Of Workpieces With Reactive Species Generated Using Alkyl Halide
    18.
    发明申请
    Processing Of Workpieces With Reactive Species Generated Using Alkyl Halide 审中-公开

    公开(公告)号：US20190318937A1

    公开(公告)日：2019-10-17

    申请号：US16379912

    申请日：2019-04-10

    Applicant: Mattson Technology, Inc.

    Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

    IPC: H01L21/311 ,  H01L21/67

    Abstract: Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.

    Integration of materials removal and surface treatment in semiconductor device fabrication
    19.
    发明授权
    Integration of materials removal and surface treatment in semiconductor device fabrication 有权

    公开(公告)号：US10403492B1

    公开(公告)日：2019-09-03

    申请号：US16216006

    申请日：2018-12-11

    Applicant: Mattson Technology, Inc.

    Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu ,  Haochen Li ,  Ting Xie ,  Qi Zhang

    IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/285

    Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

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