公开(公告)号：US20210343506A1

公开(公告)日：2021-11-04

申请号：US17245803

申请日：2021-04-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Haochen Li ,  Shuang Meng ,  Qiqun Zhang ,  Dave Kohl ,  Shawming Ma ,  Haichun Yang ,  Hua Chung ,  Ryan M. Pakulski ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: Apparatus and methods for processing a workpiece using a plasma are provided. In one example implementation, an apparatus can include a processing chamber. The apparatus can include a plasma chamber comprising a dielectric tube defining a sidewall. The apparatus can include an inductively coupled plasma source. The inductively coupled plasma source can include an RF generator configured to energize an induction coil disposed about the dielectric tube. The apparatus can include a separation grid separating the processing chamber from the plasma chamber. The apparatus can include a controller configured to operate the inductively coupled plasma source in a pulsed mode. During the pulsed mode the RF generator is configured to apply a plurality of pulses of RF power to the induction coil. A frequency of pulses can be in a range of about 1 kHz to about 100 kHz.

公开(公告)号：US11289323B2

公开(公告)日：2022-03-29

申请号：US16208003

申请日：2018-12-03

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Shuang Meng ,  Shawming Ma ,  Michael X. Yang

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.

公开(公告)号：US20220223405A1

公开(公告)日：2022-07-14

申请号：US17706090

申请日：2022-03-28

Applicant: Beijing E-Town Semiconductor Technology, Co., LTD ,  Mattson Technology, Inc.

Inventor： Shuang Meng ,  Shawming Ma ,  Michael X. Yang

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.

公开(公告)号：US11039527B2

公开(公告)日：2021-06-15

申请号：US16258744

申请日：2019-01-28

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  G01N21/00 ,  H01J37/32

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US20200245444A1

公开(公告)日：2020-07-30

申请号：US16258744

申请日：2019-01-28

Applicant: Mattson Technology, Inc.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  H01J37/32 ,  G01N21/00

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.

公开(公告)号：US20190189479A1

公开(公告)日：2019-06-20

申请号：US16208003

申请日：2018-12-03

Applicant: Mattson Technology, Inc.

Inventor： Shuang Meng ,  Shawming Ma ,  Michael X. Yang

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67213 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/67023

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.

公开(公告)号：US20210307151A1

公开(公告)日：2021-09-30

申请号：US17346754

申请日：2021-06-14

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shuang Meng ,  Xinliang Lu ,  Shawming Ma ,  Hua Chung

IPC: H05H1/00 ,  G01N21/00 ,  H01J37/32

Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.