公开(公告)号：US07897068B2

公开(公告)日：2011-03-01

申请号：US12794129

申请日：2010-06-04

申请人： Hideo Hosono ,  Kazushige Ueda ,  Masataka Yahagi ,  Hideo Takami

发明人： Hideo Hosono ,  Kazushige Ueda ,  Masataka Yahagi ,  Hideo Takami

IPC分类号： H01B1/08 ,  B32B18/00

CPC分类号： C23C14/086 ,  C04B35/453 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3272 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5436 ,  C04B2235/77 ,  C04B2235/775 ,  C23C14/3414 ,  G11B7/2531 ,  G11B7/2578 ,  G11B7/266 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715 ,  Y02T50/67 ,  Y10T428/12

摘要： A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1

公开(公告)号：US20110036710A1

公开(公告)日：2011-02-17

申请号：US12913973

申请日：2010-10-28

申请人： Hideo Takami ,  Hirohisa Ajima

发明人： Hideo Takami ,  Hirohisa Ajima

IPC分类号： C23C14/14

CPC分类号： C22C28/00 ,  C22C1/04 ,  C22C30/00 ,  C23C14/3414 ,  G11B5/851

摘要： A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr and having a relative density of 95% or more, and a manufacturing method of such a Ge—Cr alloy sputtering target wherein Cr powder having a minus sieve of 75 μm or less, and Ge powder having a minus sieve of 250 μm or less and having a BET specific surface area of 0.4 m2/g or less are dispersively mixed in an even manner, and sintered thereafter. Thereby provided is a Ge—Cr alloy sputtering target capable of suppressing variation of the deposition speed and film composition, as well as improving the production yield, of the GeCrN layer deposited with reactive sputtering as the intermediate layer between the recording layer and protective layer of a phase change optical disk, and the manufacturing method of such a target.

摘要翻译： 含有5〜50原子％的Cr且相对密度为95％以上的Ge-Cr合金溅射靶，以及这样的Ge-Cr合金溅射靶的制造方法，其中，具有负极筛为75μm的Cr粉末或 较少，并且具有250μm或更小的负极筛和BET比表面积为0.4m 2 / g或更小的Ge粉末以均匀的方式分散混合，然后烧结。 由此，作为记录层与保护层之间的中间层，能够抑制沉积有反应性溅射的GeCrN层的沉积速度和膜组成的变化以及提高生产率的Ge-Cr合金溅射靶 相变光盘及其制造方法。

公开(公告)号：US20070062808A1

公开(公告)日：2007-03-22

申请号：US11533945

申请日：2006-09-21

申请人： Masataka Yahagi ,  Yuichiro Shindo ,  Hideo Takami

发明人： Masataka Yahagi ,  Yuichiro Shindo ,  Hideo Takami

IPC分类号： C23C14/00

CPC分类号： G11B7/243 ,  C23C14/06 ,  C23C14/3414 ,  G11B7/266 ,  G11B2007/24314 ,  G11B2007/24316 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625

摘要： The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less. This sputtering target for a phase change memory is capable of reducing, as much as possible, impurities that cause the reduction in the number of times rewriting can be conducted as a result of such impurities segregating and condensing in the vicinity of the boundary face of the memory point and non-memory point; in particular, impurity elements that affect the crystallization speed, reducing the compositional deviation of the target in relation to the intended composition, and improving the rewriting properties and crystallization speed of a phase change memory by suppressing the compositional segregation of the target.

摘要翻译： 本发明提供了一种用于相变存储器的溅射靶和形成有这种靶的相变存储膜及其制造方法，其特征在于，溅射靶由不低于三分体系的元件组成，并且具有 作为其主要成分，选自锑，碲和硒的一种或多种组分，并且与预期组成相关的组成偏差为±1.0at％或更低。 用于相变存储器的这种溅射靶能够尽可能地减少由于这种杂质在边界面附近偏析和冷凝而引起重写次数减少的杂质。 记忆点和非记忆点; 特别是影响结晶速度的杂质元素，降低目标相对于目标组成的组成偏差，通过抑制靶的组成偏析来提高相变记忆的重写性能和结晶速度。

公开(公告)号：US06528442B1

公开(公告)日：2003-03-04

申请号：US09719018

申请日：2000-12-07

申请人： Katsuo Kuwano ,  Hideo Takami

发明人： Katsuo Kuwano ,  Hideo Takami

IPC分类号： C03C312

CPC分类号： C23C14/10 ,  C03C17/245 ,  C03C2217/23 ,  C03C2218/154 ,  C03C2218/32 ,  C23C14/08 ,  C23C14/3414 ,  G11B7/243 ,  G11B7/257 ,  G11B7/2578 ,  G11B7/26 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715

摘要： To provide an optically transparent film containing 0.01 to 20% by weight glass forming oxide consisting of Nb2O5, V2O5, B2O3, SiO2, and P2O6; 0.01 to 20% by weight Al2O3 or Ga2O3; and 0.01 to 5% by weight hard oxide of ZrO2 and TiO2 as required; balance being ZnO, and a sputtering target for forming such a film. This sputtering target reduces occurrence of particles during sputtering, decreases the number of interruption or discontinuance of sputtering to improve production efficiency, and forms a protective film for optical disks with large transmittance and low reflectance.

摘要翻译： 提供含有0.01〜20重量％的由Nb 2 O 5，V 2 O 5，B 2 O 3，SiO 2和P 2 O 6构成的玻璃形成氧化物的光学透明膜; 0.01〜20重量％的Al2O3或Ga2O3; 和0.01-5重量％的ZrO 2和TiO 2的硬氧化物; 余量为ZnO，以及用于形成这种膜的溅射靶。 该溅射靶减少溅射时的粒子发生，减少溅射次数或中断，提高生产效率，并且形成具有高透射率和低反射率的光盘的保护膜。

公开(公告)号：US08877021B2

公开(公告)日：2014-11-04

申请号：US11916301

申请日：2006-03-10

申请人： Hideo Takami ,  Masataka Yahagi

发明人： Hideo Takami ,  Masataka Yahagi

IPC分类号： C23C14/00 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C04B35/00 ,  C09D5/23 ,  H01F1/00 ,  H01L29/12 ,  C22C32/00 ,  C01G37/033 ,  C23C14/34 ,  C04B35/645 ,  C04B35/12 ,  C04B35/626

CPC分类号： C23C14/3414 ,  C01G37/033 ,  C01P2004/61 ,  C01P2006/80 ,  C04B35/12 ,  C04B35/62645 ,  C04B35/645 ,  C04B2235/3251 ,  C04B2235/446 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/724 ,  C04B2235/726 ,  C04B2235/77

摘要： Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks.

摘要翻译： 本发明提供一种由氧化铬构成的溅射靶的氧化铬粉末，其中硫为100重量ppm以下。 该溅射靶含有5摩尔％以上的氧化铬或氧化铬，其中溅射靶中的硫含量为100重量ppm以下，除水分，碳，氮，硫的气体成分以外的纯度为99.95重量％以上 。 用于溅射靶的氧化铬粉末能够提高氧化铬本身的纯度，以及在制造溅射靶时提高烧结密度。 作为使用这种氧化铬粉末的溅射靶的制造的结果，晶粒被精制，并且是不产生裂纹的均匀且致密的溅射靶。

公开(公告)号：US20130206591A1

公开(公告)日：2013-08-15

申请号：US13880865

申请日：2011-11-09

申请人： Hideo Takami ,  Atsushi Nara ,  Shin-ichi Ogino ,  Yuichiro Nakamura

发明人： Hideo Takami ,  Atsushi Nara ,  Shin-ichi Ogino ,  Yuichiro Nakamura

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  B22F2998/10 ,  C22C1/101 ,  C22C19/07 ,  C22C38/002 ,  C22C2202/02 ,  C22F1/00 ,  C22F1/16 ,  G11B5/851 ,  H01F41/183 ,  B22F9/04 ,  C22C1/05 ,  B22F3/10

摘要： Provided is a sputtering target for a magnetic recording film containing SiO2, wherein the sputtering target for a magnetic recording film contains B (boron) in an amount of 10 to 1000 wtppm. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, and realizing a stable discharge with a magnetron sputtering device.

摘要翻译： 提供了一种用于含有SiO 2的磁记录膜的溅射靶，其中用于磁记录膜的溅射靶含有10至1000重量ppm的B（硼）。 本发明的目的是获得能够抑制溅射中产生颗粒的目标中形成方英石的磁记录膜的溅射靶，缩短烧结时间，并且用磁控管实现稳定的放电 溅射装置。

公开(公告)号：US20130175167A1

公开(公告)日：2013-07-11

申请号：US13824146

申请日：2011-11-21

申请人： Yuki Ikeda ,  Hideo Takami

发明人： Yuki Ikeda ,  Hideo Takami

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C22C1/1084 ,  C22C32/0026 ,  C22C2202/02 ,  G11B5/851

摘要： Provided is a ferromagnetic sputtering target having a composition containing 20 mol % or less of Cr, 5 to 30 mol % of Pt, 5 to 15 mol % of SiO2, 0.05 to 0.60 mol % of Sn, with Co as a remainder thereof, wherein the Sn is contained in SiO2 particles (B) dispersed in a metal substrate (A). The method yields a ferromagnetic sputtering target containing dispersed nonmagnetic particles. The target can prevent the abnormal electrical discharge of oxides which causes the generation of particles during sputtering.

摘要翻译： 本发明提供一种具有Cr含量为20摩尔％以下，Pt：5〜15摩尔％，SiO：5〜15摩尔％，Sn：0.05〜0.60摩尔％，Co：余量的组成的铁磁性溅射靶， Sn分散在金属基板（A）中的SiO 2颗粒（B）中。 该方法产生含有分散的非磁性颗粒的铁磁溅射靶。 该目标可以防止在溅射过程中产生颗粒的氧化物的异常放电。

公开(公告)号：US20090139859A1

公开(公告)日：2009-06-04

申请号：US11916301

申请日：2006-03-10

申请人： Hideo Takami ,  Masataka Yahagi

发明人： Hideo Takami ,  Masataka Yahagi

IPC分类号： C23C14/34 ,  C09K3/00

CPC分类号： C23C14/3414 ,  C01G37/033 ,  C01P2004/61 ,  C01P2006/80 ,  C04B35/12 ,  C04B35/62645 ,  C04B35/645 ,  C04B2235/3251 ,  C04B2235/446 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/724 ,  C04B2235/726 ,  C04B2235/77

摘要： Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks.

摘要翻译： 本发明提供一种由氧化铬构成的溅射靶的氧化铬粉末，其中硫为100重量ppm以下。 该溅射靶含有5摩尔％以上的氧化铬或氧化铬，其中溅射靶中的硫含量为100重量ppm以下，除水分，碳，氮，硫的气体成分以外的纯度为99.95重量％以上 。 用于溅射靶的氧化铬粉末能够提高氧化铬本身的纯度，以及在制造溅射靶时提高烧结密度。 作为使用这种氧化铬粉末的溅射靶的制造的结果，晶粒被精制，并且是不产生裂纹的均匀且致密的溅射靶。

公开(公告)号：US07279211B2

公开(公告)日：2007-10-09

申请号：US10503296

申请日：2002-12-11

申请人： Masataka Yahagi ,  Hideo Takami

发明人： Masataka Yahagi ,  Hideo Takami

IPC分类号： B32B3/02

CPC分类号： G11B7/266 ,  C23C14/0629 ,  C23C14/3414 ,  G11B7/254 ,  G11B7/2578 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715 ,  G11B2007/25716 ,  Y10T428/21

摘要： Provided is a sputtering target and an optical recording medium having formed thereon a phase change optical disc protective film having zinc sulfide as its principal component employing such a target, as well as the manufacturing method thereof, characterized in that the sputtering target has zinc sulfide as its principal component, and is capable of adjusting the refractive index of a film containing conductive oxide in the range of 2.0 to 2.6. This sputtering target, and an optical recording medium having formed thereon a phase change optical disc protective film having zinc sulfide as its principal component employing such a target, is capable of reducing particles (dust emission) and nodules that arise during sputtering, has minimal variation in quality and is capable of improving mass productiveness, and in which the crystal grain is fine and has a high density of 90% or more.

摘要翻译： 本发明提供一种溅射靶和其上形成有硫化锌作为其主要成分的相变光盘保护膜的光记录介质及其制造方法，其特征在于，溅射靶具有硫化锌作为 其主要成分，并且能够调节含有导电氧化物的膜的折射率在2.0至2.6的范围内。 该溅射靶及其上形成有硫化锌作为其主要成分的相变光盘保护膜的光记录介质能够减少溅射时产生的颗粒（粉尘发射）和结块，具有最小的变化 并且能够提高批量生产性，并且其中晶粒细并且具有90％以上的高密度。

公开(公告)号：US20060099126A1

公开(公告)日：2006-05-11

申请号：US10547816

申请日：2004-02-03

申请人： Hideo Hosono ,  Kazushige Ueda ,  Masataka Yahagi ,  Hideo Takami

发明人： Hideo Hosono ,  Kazushige Ueda ,  Masataka Yahagi ,  Hideo Takami

IPC分类号： C01F17/00 ,  B22D7/00

CPC分类号： C04B35/645 ,  C04B35/547 ,  C04B2235/3227 ,  C04B2235/446 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/786 ,  C23C14/3414 ,  Y10T428/12

摘要： A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850° C. or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.

摘要翻译： 一种溅射靶的制造方法，其特征在于，具有通过烧结选自构成元素的基本物质，氧化物或硫族化物的至少一种以上的粉末作为原料的含有含有La和Cu的氧化硫元素的溅射靶，其特征在于，包括： 材料]在烧结工序中在850℃以下的温度下保持1小时以上，其中在反应工序后，将该材料在比反应步骤温度高的温度进行加压烧结。 除了增加含有含有La和Cu的含氧硫属元素的P型透明导电材料靶的密度以外，能够以低的制造成本扩大靶，除此之外，可以消除靶中未反应物的存在，生产率 可以通过抑制靶中的裂纹的产生而得到改善，也可以提高通过溅射形成的沉积物的质量。