VARIABLE EMISSION AREA DESIGN FOR A VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY

    公开(公告)号:US20170353012A1

    公开(公告)日:2017-12-07

    申请号:US15171844

    申请日:2016-06-02

    CPC classification number: H01S5/423 H01S5/18311 H01S5/18344 H01S5/18394

    Abstract: A vertical cavity surface emitting laser (VCSEL) array may include a plurality of VCSELs. A size of an emission area of a first VCSEL, of the plurality of VCSELs, may be different from a size of an emission area of a second VCSEL of the plurality of VCSELs. The first VCSEL may be located closer to a center of the VCSEL array than the second VCSEL. A difference between the size of the emission area of the first VCSEL and the size of the emission area of the second VCSEL may be associated with reducing a difference in operating temperature between the first VCSEL and the second VCSEL, or reducing a difference in optical power output between the first VCSEL and the second VCSEL.

    OPTIMIZING A LAYOUT OF AN EMITTER ARRAY

    公开(公告)号:US20230094127A1

    公开(公告)日:2023-03-30

    申请号:US18061593

    申请日:2022-12-05

    Abstract: A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

    BOTTOM-EMITTING EMITTER ARRAY WITH A BOTTOM SIDE METAL LAYER

    公开(公告)号:US20220131346A1

    公开(公告)日:2022-04-28

    申请号:US17247659

    申请日:2020-12-18

    Abstract: In some implementations, an emitter array may include a substrate, an epitaxial structure on the substrate, a plurality of bottom-emitting emitters defined in the epitaxial structure, a first electrical contact positioned at a top side of the epitaxial structure, a second electrical contact positioned at the top side of the epitaxial structure, and a metal layer disposed on a bottom side of the substrate. The metal layer may be electrically connected to the second electrical contact. The metal layer may include one or more openings for light emission of the plurality of bottom-emitting emitters.

    INTEGRATED FLOOD AND SPOT ILLUMINATORS

    公开(公告)号:US20220085572A1

    公开(公告)日:2022-03-17

    申请号:US17247660

    申请日:2020-12-18

    Abstract: In some implementations, an emitter module may include an emitter layer including a first emitter array configured to produce a first beam that provides flood illumination, and a second emitter array configured to produce a second beam that provides spot illumination. The emitter module may include a first optics layer, positioned in front of the emitter layer, that includes a first collimating lens positioned in front of the first emitter array, and a second collimating lens positioned in front of the second emitter array. The emitter module may include a second optics layer, positioned in front of the first optics layer, that includes an optical diffuser positioned in front of the first collimating lens, and a beamsplitter grating positioned in front of the second collimating lens.

    CONTROLLING BEAM DIVERGENCE IN A VERTICAL-CAVITY SURFACE-EMITTING LASER

    公开(公告)号:US20190067906A1

    公开(公告)日:2019-02-28

    申请号:US15688218

    申请日:2017-08-28

    Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include an active layer, a first mirror, a second mirror, and one or more oxidation layers. The active layer may be between the first mirror and the second mirror, and the one or more oxidation layers may be proximate to the active layer. The one or more oxidation layers may be configured to control beam divergence of a laser beam emitted by the VCSEL based on at least one of: a quantity of the one or more oxidation layers, a shape of the one or more oxidation layers, a thickness of the one or more oxidation layers, or a proximity of the one or more oxidation layers to the active layer.

    COMPACT EMITTER DESIGN FOR A VERTICAL-CAVITY SURFACE-EMITTING LASER

    公开(公告)号:US20170244219A1

    公开(公告)日:2017-08-24

    申请号:US15050817

    申请日:2016-02-23

    Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.

    METHODS FOR INCORPORATING A CONTROL STRUCTURE WITHIN A VERTICAL CAVITY SURFACE EMITTING LASER DEVICE CAVITY

    公开(公告)号:US20220352693A1

    公开(公告)日:2022-11-03

    申请号:US17364301

    申请日:2021-06-30

    Abstract: A method of incorporating a control structure within a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming an active region over the first mirror, forming a spacer on a surface of the active region, forming a control structure on a surface of the spacer, and forming a second mirror over the control structure. The active region and the spacer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence. The second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The control structure is formed using a chemical etching process during a transition period between the MBE phase and the MOCVD phase of the multiphase growth sequence.

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