Abstract:
An image sensing device includes a pixel sensing data processing unit, for receiving a pixel line sensing data to output first and second outputs. A controller receives the first output from the pixel sensing data processing unit, checks whether the pixel line sensing data include at least one defective pixel. If it has defective pixel, a correction rule is applied to compare the status data with a previously defective pixel. The correction rule includes comparing a state data of the previous defect pixels. If the defective pixel belongs to a regular pattern, the defective pixel is not corrected. A correction unit receives the second output and receives the correction status from the controller, and to correct the pixel and exports a display data. A recording unit records the status data of the defective pixel detected by the controller for comparing the status data of the next pixel line sensing data.
Abstract:
Embodiments of the present invention provide a correlated double sampling (CDS) circuit and a CMOS image sensor unit using the CDS circuit. The CDS circuit shifts levels of sampled sensing signal and reset signal with equal amounts. Thus a voltage difference of the sampled sensing signal and the reset signal remains unchanged, and their levels may fall within a linear input range by adjusting their levels. Compared to a conventional CDS circuit, a gain of the CDS circuit provided by the embodiment of the present invention is not reduced, and thus a design complexity of a rear circuit thereof is lower, and an induced noise is relatively low. Furthermore, the CMOS image sensor unit using the CDS circuit provided by the embodiment also has these advantages.
Abstract:
A CMOS image sensor having two ASPs can reduce increasing design difficulty as arising from a pixel array becoming larger and larger. The image sensor includes a selection circuit for transmitting outputs of CDS circuits through four divided buses to reduce parasitic loading and achieve high-speed operation. Then, the selecting circuit transmits red and blue pixels to a first ASP, and transmits green pixels to a second ASP, so as to relax the specification requirements of the ASP.
Abstract:
A variable-gain amplifier circuit and a method of changing gain amplifier paths are provided for receiving and amplifying an image sensing signal. The variable-gain amplifier circuit includes variable path and gain amplifier circuits. According to the amplification factor for the image sensing signal, the gain amplifier paths in the variable path and gain amplifier circuits are changed based on a control signal, so as to achieve the appropriate construction of the variable-gain amplifier circuit. The image sensing signal generates the required image result through appropriate numbers of variable gain amplifiers, thereby decreasing the power consumption of the circuit and reducing the design requirement of the circuit.
Abstract:
The present invention provides a correction system and method for a Successive Approximation A/D Converter (SA-ADC) of the prior art. The operation method of the correction system is described in the following: (1) Using the SA-ADC of the prior art to convert an analog signal to a digital data. The digital data is a series of logic numbers. (2) Detecting the last number of the digital data is logic number [0] or logic number [1]. (3-1) When the last number is logic number [1], proceeding the digital data and logic number [1] with an addition operation to generate a first detection digital data. Converting the first detection digital data to a first detection signal for comparing with the analog signal. If the analog signal is higher than the first detection signal, then replacing the digital data by the first detection digital data. If the analog signal is lower than the first detection signal, then outputting the digital data without correcting. (3-2) When the last number is logic number [0], using the digital data to detect directly. Converting the digital data to a second detection signal for comparing with the analog signal. If the analog signal is higher than the second detection signal, then outputting the digital data without correcting. If the analog signal is lower than the first detection signal, then proceeding the digital data and logic number [1] with a subtraction operation to generate a second detection digital data to replace the digital data.
Abstract:
The present invention provides a method of erasing data in a flash memory. The flash memory has a number of memory units for storing data. The method has involves repeatedly performing an erasing process along a first erasing route to erase data stored in each memory unit, and if after a predetermined number of erasing times, data in each memory unit is not completely erased, a second erasing route to perform the erasing process is utilized.
Abstract:
A flash memory circuit has a flash memory array and a processor. The flash memory array has a plurality of erasable flash memory cells. Each of the flash memory cells is electrically connected to a corresponding bitline. If any over-erased flash memory cell exists in the flash memory array, a processor controls the flash memory circuit to apply a correction voltage to the bitline connected to the over-erased flash memory cell so as to correct the over-erased flash memory cell. The correction voltage is continuously applied until a current along the corresponding bitline drops below a predetermined value.
Abstract:
A combinational inductor, which can be constructed on a surface of a semiconductor substrate or an isolator, is provided. The combinational inductor includes several spiral inductors which are connected together in series. The spiral inductors can be constructed on the same layer to produce a combinational inductor structure, because of the same metalization process used. In another aspect, connecting methods between neighboring spiral conductors include forward cascade and reverse cascade. A spiral conductor has at least one neighboring spiral conductor which is connected with it in reverse cascade. The inductance per unit square measurement of the inductor in series can be significantly increased through the connections between neighboring spiral conductors either in forward cascade or reverse cascade.
Abstract:
A process is disclosed for the fabrication of a MOS device with a T-shaped gate electrode, in which a selective CVD technique has been utilized to simplify the T-shaped gate process. After the formation of the gate oxide layer, no reactive ion etching step is applied, and that avoids the plasma charging damage to the gate oxide. The lightly-doped-drain structure and heavily-doped drain and source areas are formed in a self-aligned manner during the T-shaped gate process. The present invention provides a high yield rate and cost-saving in the T-shaped gate process for MOS devices.
Abstract:
To mitigate kickback noise effect, the present invention provides a reference voltage generator for an analog-to-digital converter circuit. The reference voltage generator includes a bias generator, a bias converter and an output unit. The bias generator is used for generating a first bias voltage in accordance with a reference voltage. The bias converter is coupled to the bias generator and is used for converting the first bias voltage to a second bias voltage. The output unit is coupled to the bias converter and used for generating a first voltage to a load circuit in accordance with the second bias voltage.