Venetian blind type secondary electron multiplier for secondary electron
multiplier tubes
    11.
    发明授权
    Venetian blind type secondary electron multiplier for secondary electron multiplier tubes 失效
    二次电子倍增管的百叶窗型二次电子倍增器

    公开(公告)号:US4950951A

    公开(公告)日:1990-08-21

    申请号:US300981

    申请日:1989-01-24

    IPC分类号: H01J43/04 H01J43/22 H01J43/24

    CPC分类号: H01J43/22

    摘要: A secondary electron multiplier having a Venetian blind dynode structure for use in a photomultiplier tube or the like. The dynode structure includes first and second dynodes being vertically disposed transverse to each other in that the geometrically transparent part of the first dynode is aligned with a portion of the geometrically opaque part of the second dynode corresponding to a width dimension defined from the lower end of the second dynode, and the voltages applied to the dynodes are specially configured to provide a sufficient energy to the dynodes for secondary electron mulitplication.

    摘要翻译: 具有用于光电倍增管等的百叶窗极化结构的二次电子倍增器。 倍增极结构包括第一和第二倍增电极,它们彼此垂直设置,因为第一倍增电极的几何透明部分与第二倍增电极的几何不透明部分的一部分对准,该部分对应于从 第二倍增电极和施加到倍增电极的电压被特别地配置为向二次电子倍增提供足够的能量用于二次电子多重化。

    Photomultiplier with plural photocathodes
    12.
    发明授权
    Photomultiplier with plural photocathodes 失效
    具有多个光电阴极的光电倍增管

    公开(公告)号:US4881008A

    公开(公告)日:1989-11-14

    申请号:US182517

    申请日:1988-04-18

    IPC分类号: H01J43/04 H01J43/20 H01J43/28

    CPC分类号: H01J43/045

    摘要: A photomultiplier with plural photocathodes comprising a rectangular end face plate, plural photocathodes arranged on the end face plates at predetermined intervals in the longitudinal direction of the end face plate, plural focusing electrodes assigned to the photocathodes respectively, plural dynodes provided in common for all of the photocathodes, and plural anode electrodes assigned to the photocathodes respectively, each of the dynodes having plural electron emitting parts for emitting secondary electrons and insulating parts for preventing the secondary electrons emitted from any one of the electron emitting parts from straying into the other electron emitting parts.

    摘要翻译: 具有多个光电阴极的光电倍增管,包括矩形端面板,在端面板的长度方向上以预定间隔布置在端面板上的多个光电阴极,分别分配给光电阴极的多个聚焦电极, 光电阴极和分别分配给光电阴极的多个阳极电极,每个倍增极具有用于发射二次电子的多个电子发射部分和用于防止从任何一个电子发射部分发射的二次电子的绝缘部分偏离到另一个电子发射 部分。

    Photocathode
    13.
    发明授权
    Photocathode 有权
    光电阴极

    公开(公告)号:US08796923B2

    公开(公告)日:2014-08-05

    申请号:US12996526

    申请日:2008-11-07

    IPC分类号: H01J40/06

    CPC分类号: H01J40/06 H01J1/34 H01J31/26

    摘要: The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode 10, an intermediate layer 14, an underlayer 16, and a photoelectron emission layer 18 are formed in this order on a substrate 12. The photoelectron emission layer 18 contains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layer 18 contains 32 mol % or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.

    摘要翻译: 本发明的目的在于提供一种能够改善各种特性的光电阴极。 在光电阴极10中,中间层14,底层16和光电子发射层18依次形成在基板12上。光电子发射层18含有Sb和Bi,并且响应于光入射而起到发射光电子的作用 上。 光电子发射层18相对于SbBi含有32摩尔%以下的Bi。 这可以显着提高低温下的线性度。

    PHOTOCATHODE
    14.
    发明申请
    PHOTOCATHODE 有权
    光刻胶

    公开(公告)号:US20110089825A1

    公开(公告)日:2011-04-21

    申请号:US12996526

    申请日:2008-11-07

    IPC分类号: H01J40/06

    CPC分类号: H01J40/06 H01J1/34 H01J31/26

    摘要: The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode 10, an intermediate layer 14, an underlayer 16, and a photoelectron emission layer 18 are formed in this order on a substrate 12. The photoelectron emission layer 18 contains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layer 18 contains 32 mol % or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.

    摘要翻译: 本发明的目的在于提供一种能够改善各种特性的光电阴极。 在光电阴极10中,中间层14,底层16和光电子发射层18依次形成在基板12上。光电子发射层18含有Sb和Bi,并且响应于光入射而起到发射光电子的作用 上。 光电子发射层18相对于SbBi含有32摩尔%以下的Bi。 这可以显着提高低温下的线性度。

    Electron tube with a semiconductor anode outputting a distortion free
electrical signal
    15.
    发明授权
    Electron tube with a semiconductor anode outputting a distortion free electrical signal 失效
    具有半导体阳极的电子管输出无失真的电信号

    公开(公告)号:US5780967A

    公开(公告)日:1998-07-14

    申请号:US705678

    申请日:1996-08-30

    CPC分类号: H01J31/26

    摘要: To eliminate a distortion of an output image detected by a semiconductor device serving as an anode in an electron tube, a faceplate is configured to a planar shape and a window provided on the semiconductor device has a pincushion outer profile in which points on the outer profile of the window that correspond to points on the outer profile of the faceplate are outwardly positioned farther than the corresponding points in the outer profile of the faceplate that are apart from the center of the faceplate. Further, the window is divided into a plurality of segments to define picture elements.

    摘要翻译: 为了消除由电子管中用作阳极的半导体器件检测到的输出图像的失真,面板被构造成平面形状,并且设置在半导体器件上的窗口具有枕形外部轮廓,其中外部轮廓上的点 对应于面板的外轮廓上的点的窗口向外定位成比面板的外轮廓中与面板中心分开的对应点更远。 此外,窗口被分成多个段以定义图像元素。

    Photomultiplier
    17.
    发明授权
    Photomultiplier 失效
    光电倍增管

    公开(公告)号:US5561347A

    公开(公告)日:1996-10-01

    申请号:US318291

    申请日:1994-10-05

    CPC分类号: H01J43/04 H01J43/06

    摘要: There is provided a photomultiplier in which a transmittance of an incident light and a photosensitivity is high and a hysteresis characteristic is excellent. Therefore, in the present invention, a photocathode 16, dynodes 17a to 17c and an anode 18 are supported between insulating material substrates 12a and 12b provided in a glass bulb 11. A transparent conductive film 19 is formed on an inside wall surface of a light entrance portion 15. The transparent conductive film 19 electrically contacts with a pad 20 which is led through a terminal 14 to the outside. The same potential as the photocathode 12 is applied through the pad 20 to the transparent conductive film 19. The incident light directly impinges on the photocathode 16 through the glass bulb 11 and the transparent conductive film 19 at a place corresponding to the light entrance portion 15. As a result, the incident light reaches the photocathode 12 with not being interfered at all, and the transmittance of the incident light is improved. Since a predetermined potential is applied to the transparent conductive film 19, the change of the potential of the inside wall surface of the glass bulb 11 is performed at high speed, and the hysteresis becomes extremely small.

    摘要翻译: 提供了一种光电倍增管,其中入射光的透射率和光敏性高,滞后特性优异。 因此,在本发明中,将光电阴极16,倍增极数17a〜17c和负极18支撑在设置在玻璃泡11中的绝缘材料基板12a和12b之间。透明导电膜19形成在光的内壁面上 透明导电膜19与通过端子14引导到外部的焊盘20电接触。 与光电阴极12相同的电位通过焊盘20施加到透明导电膜19.入射光通过玻璃泡11和透明导电膜19在对应于光入射部分15的位置处直接照射在光电阴极16上 结果,入射光完全没有被干扰地到达光电阴极12,并且提高了入射光的透射率。 由于对透明导电膜19施加了规定的电位,所以高速地进行玻璃灯泡11的内壁面的电位变化,滞后变得非常小。

    Photomultiplier with secondary electron shielding means
    19.
    发明授权
    Photomultiplier with secondary electron shielding means 失效
    具有二次电子屏蔽装置的光电倍增管

    公开(公告)号:US4825066A

    公开(公告)日:1989-04-25

    申请号:US155842

    申请日:1988-02-12

    IPC分类号: H01J43/06 H01J43/28 H01J40/14

    CPC分类号: H01J43/06 H01J43/28

    摘要: A photomultiplier for converting an incident weak light into multiplied electrons to thereby output an electrical signal corresponding to the intensity of the incidence light. The photomultiplier comprises a photocathode for emitting primary electrons; plural dynodes for emitting secondary electrons in response to incident of the primary electrons and multiplying first secondary electrons passing between the dynodes; and shield means for preventing second secondary electrons emitted from a first dynode of the dynodes toward the photocathode from returning to the dynodes, thereby to reduce the generation of a residual pulse currents caused by the second secondary electrons and to accurately detect a main pulse current caused by the first secondary electrons.

    摘要翻译: 一种用于将入射的弱光转换成倍数电子从而输出对应于入射光强度的电信号的光电倍增管。 光电倍增管包括用于发射一次电子的光电阴极; 多个倍增电极,用于响应于初级电子的入射发射二次电子并且乘以在倍增电极之间通过的第一二次电子; 以及屏蔽装置,用于防止从倍增电极的第一倍增电极发射到光电阴极的第二二次电子返回到倍增极,从而减少由第二二次电子引起的残留脉冲电流的产生,并且精确地检测引起的主脉冲电流 由第一个二次电子。