发明授权
- 专利标题： Photocathode
- 专利标题（中）： 光电阴极
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申请号： US12996526申请日： 2008-11-07
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公开(公告)号： US08796923B2公开(公告)日： 2014-08-05
- 发明人: Toshikazu Matsui , Yasumasa Hamana , Kimitsugu Nakamura , Yoshihiro Ishigami , Daijiro Oguri
- 申请人： Toshikazu Matsui , Yasumasa Hamana , Kimitsugu Nakamura , Yoshihiro Ishigami , Daijiro Oguri
- 申请人地址： JP Hamamatsu-shi, Shizuoka
- 专利权人： Hamamatsu Photonics K.K.
- 当前专利权人： Hamamatsu Photonics K.K.
- 当前专利权人地址： JP Hamamatsu-shi, Shizuoka
- 代理机构： Drinker Biddle & Reath LLP
- 优先权： JP2008-155777 20080613
- 国际申请： PCT/JP2008/070329 WO 20081107
- 国际公布： WO2009/150760 WO 20091217
- 主分类号： H01J40/06
- IPC分类号： H01J40/06
摘要：
The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode 10, an intermediate layer 14, an underlayer 16, and a photoelectron emission layer 18 are formed in this order on a substrate 12. The photoelectron emission layer 18 contains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layer 18 contains 32 mol % or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.
公开/授权文献
- US20110089825A1 PHOTOCATHODE 公开/授权日：2011-04-21
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