公开(公告)号：US20060226119A1

公开(公告)日：2006-10-12

申请号：US10562400

申请日：2004-06-25

申请人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

发明人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

IPC分类号： B08B6/00 ,  C23F1/00

CPC分类号： H01J37/321 ,  B08B7/0035 ,  C23G5/00 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

摘要翻译： 环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体 和含有至少5％的NF 3 N的NF 3气体，并通过以高频功率驱动线圈来点燃等离子体，其中等离子体点火步骤在 总压力为6.65-66.5Pa。

公开(公告)号：US09099298B2

公开(公告)日：2015-08-04

申请号：US13617530

申请日：2012-09-14

申请人： Kazuya Dobashi ,  Takashi Fuse

发明人： Kazuya Dobashi ,  Takashi Fuse

IPC分类号： B08B3/02 ,  H01L21/02 ,  H01L21/67 ,  H01L21/311

CPC分类号： H01L21/02052 ,  H01L21/0206 ,  H01L21/31133 ,  H01L21/67051

摘要： A substrate cleaning device is capable of removing more diverse contaminants from substrates than ultra-low temperature aerosol ejection, while avoiding technical problems inherent to wet cleaning, such as micro-roughness, watermarks, loss of substrate material and destruction of the device structure. A substrate cleaning device for cleaning wafers to which cleaning target objects have adhered includes a cluster spraying unit which sprays the wafer with one or more types of clusters formed of cleaning preparation molecules agglomerated together, a suction unit which sucks the cleaning target objects separated by spraying the clusters of the cleaning agent molecules; and a unit for moving the wafer and the cluster spraying unit relative to the one another along the surface of the wafer W to which the cleaning target objects have adhered.

摘要翻译： 衬底清洁装置能够从超低温气溶胶喷射中除去基材中更多种污染物，同时避免湿法清洁所固有的技术问题，例如微粗糙度，水印，衬底材料的损失和器件结构的破坏。 用于清洁清洁对象物体所粘附的晶片的基板清洗装置包括：一个簇喷射单元，其用一个或多个聚集在一起的清洁制剂分子形成的一个或多个类型的簇喷射晶片;抽吸单元，其吸取通过喷射分离的清洁对象物体 清洁剂分子的簇; 以及用于相对于彼此沿晶片W的表面移动所述晶片和所述簇喷射单元的单元，所述晶片W的附着在所述表面上。

公开(公告)号：US20120021538A1

公开(公告)日：2012-01-26

申请号：US13189715

申请日：2011-07-25

申请人： Sung Tae Lee ,  Kazuya Dobashi

发明人： Sung Tae Lee ,  Kazuya Dobashi

IPC分类号： H01L21/66

CPC分类号： H01L21/31116 ,  H01L22/12 ,  H01L22/20

摘要： There is provided a plasma processing method performing a plasma etching process on an oxide film of a target substrate through one or more steps by using a processing gas including a CF-based gas and a COS gas. The plasma processing method includes: performing a plasma etching process on the oxide film of the target substrate according to a processing recipe; measuring a concentration of sulfur (S) remaining on the target substrate (residual S concentration) after the plasma etching process is performed according to the processing recipe; adjusting a ratio of a COS gas flow rate with respect to a CF-based gas flow rate (COS/CF ratio) so as to allow the residual S concentration to become equal to or smaller than a predetermined value; and performing an actual plasma etching process according to a modified processing recipe storing the adjusted COS/CF ratio.

摘要翻译： 提供了通过使用包括CF基气体和COS气体的处理气体，通过一个或多个步骤对目标基板的氧化物膜进行等离子体蚀刻处理的方法。 等离子体处理方法包括：根据处理配方对目标基板的氧化物膜进行等离子体蚀刻处理; 根据加工配方进行等离子体蚀刻处理后，测定残留在目标基板上的硫（S）浓度（残留S浓度） 调整COS气体流量相对于CF系气体流量比（COS / CF比）的比例，使残留S浓度变得等于或小于预定值; 并根据存储了经调整的COS / CF比的改进处理方案进行实际等离子体蚀刻处理。

公开(公告)号：US07383841B2

公开(公告)日：2008-06-10

申请号：US10519401

申请日：2003-07-01

申请人： Hiroshi Shinriki ,  Kazuya Dobashi ,  Mikio Suzuki ,  Takashi Magara

发明人： Hiroshi Shinriki ,  Kazuya Dobashi ,  Mikio Suzuki ,  Takashi Magara

IPC分类号： B08B3/00 ,  B08B9/00

CPC分类号： C23C16/4405

摘要： In a cleaning step of a substrate-processing device, vacuum drawing is made for the space between an inner chamber and an outer chamber that receives the inner chamber. Temperature of the inner chamber is set higher than the temperature of the inner chamber during substrate processing and set lower than the temperature of a substrate support member. After that, a cleaning gas containing hexafluoroacetylaceton (Hhfac) is supplied in the inner chamber, and substances to be cleaned off adhering inside the inner chamber are removed.

摘要翻译： 在基板处理装置的清洁步骤中，对内室和接收内室的外室之间的空间进行真空抽吸。 内部室的温度被设定为高于衬底处理期间内部室的温度并且设定为低于衬底支撑构件的温度。 之后，在内室供给含有六氟乙酰丙酮（Hhfac）的清洗气体，除去附着在内室内的要清洗的物质。

公开(公告)号：US20140227882A1

公开(公告)日：2014-08-14

申请号：US14232989

申请日：2012-07-12

申请人： Kensuke Inai ,  Kazuya Dobashi

发明人： Kensuke Inai ,  Kazuya Dobashi

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02057 ,  H01L21/02046 ,  H01L21/02068 ,  H01L21/3086 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/67115

摘要： Deposits such as particles deposited on a surface of a target object can be easily removed while suppressing damage to the target object such as destruction of pattern formed on the surface of the target object or film roughness on the surface of the target object. In a pre-treatment, vapor of a hydrogen fluoride is supplied to a wafer W to dissolve a natural oxide film 11, so that a deposit 10 attached to a surface of the natural oxide film 11 is slightly separated from a surface of the wafer W. A carbon dioxide gas that does not react with an underlying film 12 is supplied to a processing gas atmosphere where the wafer W is placed, so that a gas cluster of the carbon dioxide gas is generated. Then, the gas cluster in a non-ionized state is irradiated toward the wafer W to remove the deposit 10.

摘要翻译： 可以容易地去除沉积在目标物体表面上的沉积物，同时抑制目标物体的损伤，例如在目标物体的表面上形成的图案的破坏或目标物体的表面上的膜粗糙度。 在预处理中，将氟化氢的蒸气供给到晶片W以溶解天然氧化膜11，使得附着在自然氧化膜11的表面上的沉积物10与晶片W的表面稍微分离 将不与下面的膜12反应的二氧化碳气体供给到放置晶片W的处理气体气氛中，从而产生二氧化碳气体的气体簇。 然后，将非离子化状态的气体簇朝向晶片W照射以除去沉积物10。

公开(公告)号：US20100252068A1

公开(公告)日：2010-10-07

申请号：US12752813

申请日：2010-04-01

申请人： Hiroshi KANNAN ,  Noboru Tamura ,  Kazuya Dobashi

发明人： Hiroshi KANNAN ,  Noboru Tamura ,  Kazuya Dobashi

IPC分类号： B08B9/027 ,  H05H1/00 ,  B44C1/22

CPC分类号： H01J37/321 ,  B08B7/0035 ,  C23G5/00 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

摘要翻译： 环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体 以及包含至少5％的NF 3的NF 3气体，并通过以高频功率驱动线圈点燃等离子体，其中等离子体点火步骤在6.65-66.5Pa的总压力下进行。

公开(公告)号：US09214364B2

公开(公告)日：2015-12-15

申请号：US13429720

申请日：2012-03-26

申请人： Kazuya Dobashi ,  Kensuke Inai ,  Akitaka Shimizu ,  Kenta Yasuda ,  Yu Yoshino ,  Toshihiro Aida ,  Takehiko Senoo

发明人： Kazuya Dobashi ,  Kensuke Inai ,  Akitaka Shimizu ,  Kenta Yasuda ,  Yu Yoshino ,  Toshihiro Aida ,  Takehiko Senoo

IPC分类号： H01L21/67 ,  C23C16/455 ,  H01J37/32

CPC分类号： H01L21/67028 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/45587 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67051 ,  H01L21/67069

摘要： A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

摘要翻译： 基板清洗装置包括支撑单元，设置在具有气体排出口的处理室中，用于支撑基板; 一个或多个喷嘴单元，每个喷嘴单元用于将气体簇喷射到由支撑单元支撑的基板的周边部分，以从周边部分去除不需要的物质; 以及用于在喷射气体簇期间改变支撑单元和喷嘴单元的相对位置的移动机构。 每个喷嘴单元排出具有高于处理室中的压力的​​清洁气体，使得清洁气体被绝热膨胀以形成原子和/或分子的聚集体。

公开(公告)号：US08574448B2

公开(公告)日：2013-11-05

申请号：US12752813

申请日：2010-04-01

申请人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

发明人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F3/00

CPC分类号： H01J37/321 ,  B08B7/0035 ,  C23G5/00 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

摘要翻译： 环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体 以及包含至少5％的NF 3的NF 3气体，并通过以高频功率驱动线圈点燃等离子体，其中等离子体点火步骤在6.65-66.5Pa的总压力下进行。

公开(公告)号：US20120071003A1

公开(公告)日：2012-03-22

申请号：US13233150

申请日：2011-09-15

申请人： Kazuya Dobashi ,  Takashi Fuse ,  Satohiko Hoshino ,  Takehiko Senoo ,  Yu Yoshino

发明人： Kazuya Dobashi ,  Takashi Fuse ,  Satohiko Hoshino ,  Takehiko Senoo ,  Yu Yoshino

IPC分类号： H01L21/31 ,  C23C14/16 ,  C23F1/08 ,  C23C14/34 ,  C23C16/455 ,  C23C16/48

CPC分类号： H01L21/306 ,  C23C14/02 ,  C23C14/165 ,  C23C14/568 ,  H01M4/0421 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/386 ,  H01M10/0525

摘要： Disclosed is a technology in which a nozzle part is mounted in a vacuum chamber and a silicon substrate is held to face a discharge hole of the nozzle part. For example, ClF3 gas and Ar gas are supplied from the nozzle part and the mixed gas is discharged from the nozzle part under a vacuum atmosphere. By doing this, the mixed gas is adiabatically expanded and the Ar atoms or ClF3 molecules are combined, which become a gas cluster. The gas cluster is irradiated to the surface of the silicon substrate without being ionized and, as a result, the surface of the silicon surface becomes a porous state. Then, lithium is grown on the surface of the silicon substrate in a separate vacuum chamber 41 by sputtering without breaking the vacuum.

摘要翻译： 公开了一种技术，其中喷嘴部分安装在真空室中，并且硅衬底被保持以面对喷嘴部分的排放孔。 例如，从喷嘴部供给ClF 3气体和Ar气体，在真空气氛下从喷嘴部排出混合气体。 通过这样做，混合气体绝热膨胀，Ar原子或ClF3分子结合成为气体簇。 将气体簇照射到硅衬底的表面而不被电离，结果，硅表面变成多孔状态。 然后，通过溅射在单独的真空室41中在硅衬底的表面上生长锂，而不破坏真空。

公开(公告)号：US20060175011A1

公开(公告)日：2006-08-10

申请号：US10519401

申请日：2003-07-01

申请人： Hiroshi Shinriki ,  Kazuya Dobashi ,  Mikio Suzuki ,  Takashi Magara

发明人： Hiroshi Shinriki ,  Kazuya Dobashi ,  Mikio Suzuki ,  Takashi Magara

IPC分类号： H01L21/306 ,  B08B7/04 ,  B08B9/00 ,  C03C25/68 ,  B08B3/00

CPC分类号： C23C16/4405

摘要： In a cleaning step of a substrate-processing device, vacuum drawing is made for the space between an inner chamber and an outer chamber that receives the inner chamber. Temperature of the inner chamber is set higher than the temperature of the inner chamber during substrate processing and set lower than the temperature of a substrate support member. After that, a cleaning gas containing hexafluoroacetylaceton (Hhfac) is supplied in the inner chamber, and substances to be cleaned off adhering inside the inner chamber are removed.

摘要翻译： 在基板处理装置的清洁步骤中，对内室和接收内室的外室之间的空间进行真空抽吸。 内部室的温度被设定为高于衬底处理期间内部室的温度并且设定为低于衬底支撑构件的温度。 之后，在内室供给含有六氟乙酰丙酮（Hhfac）的清洗气体，除去附着在内室内的要清洗的物质。