公开(公告)号：US09224944B2

公开(公告)日：2015-12-29

申请号：US14223802

申请日：2014-03-24

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

Abstract translation: 根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。 磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。 所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。 第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

公开(公告)号：US20140087483A1

公开(公告)日：2014-03-27

申请号：US13847069

申请日：2013-03-19

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yuichi OHSAWA ,  Junichi Ito ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Naoki Tamaoki

IPC: H01L43/12

CPC classification number: H01L43/12 ,  H01J37/08 ,  H01J37/3053 ,  H01J37/3056 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a manufacturing method of a magnetoresistive effect element includes forming a laminated structure on a substrate, the laminated structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having an invariable magnetization direction, and a non-magnetic layer between the first and second magnetic layers, forming a first mask layer having a predetermined plane shape on the laminated structure, and processing the laminated structure based on the first mask layer by using an ion beam whose solid angle in a center of the substrate is 10° or more.

Abstract translation: 根据一个实施例，磁阻效应元件的制造方法包括在基板上形成叠层结构，层压结构包括具有可变磁化方向的第一磁性层，具有不变磁化方向的第二磁性层， 在第一和第二磁性层之间形成磁性层，在叠层结构上形成具有预定平面形状的第一掩模层，并且通过使用在基板的中心处具有立体角的离子束来处理基于第一掩模层的层叠结构 是10°以上。