Method and System for Measuring Heat Flux
    11.
    发明申请
    Method and System for Measuring Heat Flux 有权
    测量热通量的方法和系统

    公开(公告)号:US20140355643A1

    公开(公告)日:2014-12-04

    申请号:US14290255

    申请日:2014-05-29

    CPC classification number: G01K19/00 G01K17/00

    Abstract: A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.

    Abstract translation: 配备有热量传感器的测量晶片包括基板,热耦合到基板的一部分的盖,形成在基板和盖之间的传感器腔,设置在传感器腔的至少一部分内的热障,底部温度 传感器热耦合到衬底并且由热屏障的一部分与盖隔离,并且顶部温度传感器热耦合到盖并通过热障的另外部分与衬底绝缘,其中底部温度 传感器和顶部温度传感器与通过基板和靠近传感器腔的盖子的热通量有关。

    PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER
    14.
    发明申请
    PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER 审中-公开
    过程状态感测装置和等离子体室的方法

    公开(公告)号:US20150020972A1

    公开(公告)日:2015-01-22

    申请号:US14505289

    申请日:2014-10-02

    Inventor: Earl Jensen Mei Sun

    Abstract: A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

    Abstract translation: 用于测量用于处理工件的等离子体室中的等离子体工艺参数的感测装置可以包括具有嵌入在衬底中的一个或多个传感器的衬底。 基板可以具有由在等离子体室中等离子体处理的与工件基本相同的材料制成的表面。 每个传感器可以包括由与基底表面基本相同的材料制成的收集器部分。 集电器部分包括与衬底的表面平齐的表面。 传感器电子器件嵌入基板并耦合到收集器部分。 当衬底表面暴露于等离子体时,可以用传感器测量由等离子体产生的一个或多个信号。

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