Abstract:
Systems and methods for determining information for a wafer are provided. One system includes a first grating that diffracts light from a wafer having wavelengths in a first portion of a broadband range and does not diffract the light from the wafer having wavelengths in a second portion of the broadband range. The system also includes a second grating positioned in the path of the light that is not diffracted by the first grating. The second grating diffracts the light from the wafer having the wavelengths in the second portion of the broadband range. The system further includes a first detector configured to generate first output responsive to the light diffracted by the first grating and a second detector configured to generate second output responsive to the light diffracted by the second grating.
Abstract:
Methods and systems for enhancing the throughput of a metrology system generating measurement signals based on at least two different optical properties of the illumination light are presented. A detector having a two dimensional photosensitive area is subdivided into multiple photosensitive stripes by multiple, independent linear arrays of shift register elements located within the photosensitive area. Charge transfer from pixels within each stripe is directed to a distinct linear array of shift register elements. Each photosensitive stripe is able to resolve an optical property dispersed across the length of each stripe with relatively high resolution. In addition, the detector is able to resolve another optical property dispersed across several photosensitive stripes in a direction orthogonal to each linear array of shift registers at a relatively low resolution.
Abstract:
Methods and systems for matching critical dimension measurement applications at high precision across multiple optical metrology systems are presented. In one aspect, machine parameter values of a metrology system are calibrated based on critical dimension measurement data. In one further aspect, calibration of the machine parameter values is based on critical dimension measurement data collected by a target measurement system from a specimen with assigned critical dimension parameter values obtained from a reference measurement source. In another further aspect, the calibration of the machine parameter values of a target measurement system is based on measurement data without knowledge of critical dimension parameter values. In some examples, the measurement data includes critical dimension measurement data and thin film measurement data. Calibration of machine parameter values based on critical dimension data enhances application and tool-to-tool matching among systems for measurement of critical dimensions, film thickness, film composition, and overlay.