公开(公告)号：US12270701B2

公开(公告)日：2025-04-08

申请号：US18610669

申请日：2024-03-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Soh Uenoyama ,  Takuya Hashimoto

IPC: G01J1/44 ,  G01J1/04

Abstract: The light detector includes a light detection substrate having at least one light receiving region and a light incident surface on which a detection target light is incident, and a meta-lens including a plurality of unit structures arranged in a grid pattern and disposed on the light incident surface to focus the detection target light. When viewed in a thickness direction of the light detection substrate, an opening region in which no unit structure is formed is provided in a region including a center of the meta-lens.

公开(公告)号：US11976968B2

公开(公告)日：2024-05-07

申请号：US18139426

申请日：2023-04-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Soh Uenoyama ,  Takuya Hashimoto

IPC: G01J1/44 ,  G01J1/04

CPC classification number: G01J1/44 ,  G01J1/0411 ,  G01J2001/4466

Abstract: The light detector includes a light detection substrate having at least one light receiving region and a light incident surface on which a detection target light is incident, and a meta-lens including a plurality of unit structures arranged in a grid pattern and disposed on the light incident surface to focus the detection target light. When viewed in a thickness direction of the light detection substrate, an opening region in which no unit structure is formed is provided in a region including a center of the meta-lens.

公开(公告)号：US11686956B2

公开(公告)日：2023-06-27

申请号：US16622497

申请日：2018-06-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuu Takiguchi ,  Kazuyoshi Hirose ,  Yoshitaka Kurosaka ,  Takahiro Sugiyama ,  Yoshiro Nomoto ,  Soh Uenoyama

IPC: G02F1/015 ,  H01S5/00 ,  H01S5/068

CPC classification number: G02F1/015 ,  H01S5/0085 ,  H01S5/06821 ,  G02F1/0154

Abstract: The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.

公开(公告)号：US11646546B2

公开(公告)日：2023-05-09

申请号：US16433127

申请日：2019-06-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro Sugiyama ,  Yuu Takiguchi ,  Yoshitaka Kurosaka ,  Kazuyoshi Hirose ,  Yoshiro Nomoto ,  Soh Uenoyama

IPC: H01S5/11 ,  H01S5/042 ,  H01S5/12 ,  H01S5/42 ,  H01S5/026 ,  H01S5/343 ,  H01S5/183

CPC classification number: H01S5/11 ,  H01S5/04256 ,  H01S5/42 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/04254 ,  H01S5/1835 ,  H01S5/34313 ,  H01S5/34353 ,  H01S5/423 ,  H01S2301/16 ,  H01S2301/18 ,  H01S2301/20

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

公开(公告)号：US11637409B2

公开(公告)日：2023-04-25

申请号：US16432198

申请日：2019-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro Sugiyama ,  Yuu Takiguchi ,  Yoshitaka Kurosaka ,  Kazuyoshi Hirose ,  Yoshiro Nomoto ,  Soh Uenoyama

IPC: H01S5/18 ,  H01S5/42 ,  H01S5/062 ,  H01S5/11

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.