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公开(公告)号：US20230223418A1
公开(公告)日：2023-07-13
申请号：US17922803
申请日：2021-01-12
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Jun HIRAMITSU , Mitsuhito MASE , Akihiro SHIMADA , Hiroaki ISHII , Toshinori ITO , Yuma TANAKA
IPC: H01L27/146 , H01L31/107
CPC classification number: H01L27/1463 , H01L31/107
Abstract: An optical sensor includes an avalanche multiplication region including a first multiplication region having a first conductive type and a second multiplication region having a second conductive type, each of the first multiplication region and the second multiplication region being formed in a layer shape, a charge collection region having the second conductive type disposed on a first side of the second multiplication region, and a first conductive region having the first conductive type disposed on the first side of the second multiplication region. The second multiplication region has a first portion overlapping the charge collection region in a thickness direction of the first multiplication region and the second multiplication region and a second portion overlapping the first conductive region in the thickness direction. A concentration of impurities in the first portion is higher than a concentration of impurities in the second portion.
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公开(公告)号：US20210318417A1
公开(公告)日：2021-10-14
申请号：US16846823
申请日：2020-04-13
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito MASE , Keiki TAGUCHI , Hajime ISHIHARA , Hiroo YAMAMOTO , Akihiro SHIMADA
IPC: G01S7/4863 , G01S17/10
Abstract: A light detection device includes a first photodiode, a second photodiode connected in series to the first photodiode, a first light source configured to output first pulsed light to which the first photodiode is sensitive, and a signal output unit configured to output a current as a detection signal, the current that flow through the second photodiode.
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公开(公告)号：US20210132199A1
公开(公告)日：2021-05-06
申请号：US16322664
申请日：2017-05-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito MASE , Jun HIRAMITSU , Akihiro SHIMADA
IPC: G01S7/4863 , H01L27/146
Abstract: A range sensor includes a silicon substrate and a transfer electrode. The silicon substrate includes a first principal surface and a second principal surface opposing each other. The silicon substrate is provided with a charge generation region configured to generate a charge in response to incident light and a charge collection region configured to collect charges from the charge generation region, on the first principal surface side. The transfer electrode is disposed between the charge generation region and the charge collection region on the first principal surface. A region of the second principal surface corresponding at least to the charge generation region is formed with a plurality of protrusions. The plurality of protrusions includes a slope inclined with respect to a thickness direction of the silicon substrate. A (111) plane of the silicon substrate is exposed as the slope at the protrusion. A height of the protrusion is 200 nm or more.
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公开(公告)号：US20180106902A1
公开(公告)日：2018-04-19
申请号：US15567645
申请日：2016-04-08
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito MASE , Jun HIRAMITSU , Akihiro SHIMADA
CPC classification number: G01S17/10 , G01S7/486 , G01S7/4861 , G01S7/4865
Abstract: The processing unit causes a light source unit to emit modulated light in one or more emission periods in a plurality of charge transfer cycles within a frame period from connection of an accumulating region to a reset potential to next connection of the accumulating region to the reset potential by controlling a reset switch, and increases the number of emission periods per charge transfer cycle within one frame period. The processing unit obtains, from a sensor unit, a plurality of read values corresponding to a charge amount accumulated in the accumulating region at an alternate point with the plurality of charge transfer cycles, in each of a plurality of read cycles corresponding to each of the plurality of charge transfer cycles. The processing unit calculates the distance based on the plurality of obtained read values.
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Patent Agency Ranking
公开(公告)号：US20170031025A1
公开(公告)日：2017-02-02
申请号：US15302178
申请日：2015-04-17
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito MASE , Jun HIRAMITSU , Akihiro SHIMADA
CPC classification number: G01S17/89 , G01S7/4914 , G01S7/4915 , G01S17/36 , H01L27/14603 , H01L27/14612 , H01L27/14643 , H04N5/3745
Abstract: In a range image sensor, a plurality of range sensors are disposed in a one-dimensional direction. The plurality of range sensors include a photogate electrode, first and second signal charge accumulating regions disposed on one side of the photogate electrode, third and fourth signal charge accumulating regions disposed on the other side, first transfer electrodes for making charge flow into the first and fourth signal charge accumulating regions in response to a first transfer signal, and second transfer electrodes for making charge flow into the second and third signal charge accumulating regions in response to a second transfer signal.
Abstract translation: 在范围图像传感器中，多个范围传感器沿一维方向设置。 多个量程传感器包括光栅电极，设置在光栅电极的一侧的第一和第二信号电荷累积区，设置在另一侧的第三和第四信号电荷累积区，用于使电荷流入第一和第二信号电荷的第一传输电极， 响应于第一传送信号的第四信号电荷累积区域，以及响应于第二传送信号使电荷流入第二和第三信号电荷累积区域的第二传输电极。
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公开(公告)号：US20230236296A1
公开(公告)日：2023-07-27
申请号：US18023145
申请日：2021-05-20
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito MASE , Jun HIRAMITSU , Akihiro SHIMADA
IPC: G01S7/4863 , G01S17/894 , G01S17/18
CPC classification number: G01S7/4863 , G01S17/894 , G01S17/18
Abstract: A distance image acquisition device includes a distance measurement sensor that detects a measurement light by transferring charges generated in a charge generation region in response to incidence of a measurement light reflected by a target object, to a charge accumulation region by using a transfer gate electrode. The charge generation region includes an avalanche multiplication region that causes avalanche multiplication. The control unit divides an entire distance range of a measurement target into the plurality of sections, controls the distance measurement sensor so as to perform measurements about a plurality of sections while varying a time difference between an emission timing of the measurement light by the light source and a transferring timing of the charges by the transfer gate electrode among the plurality of sections, and generates a distance image of the entire distance range based on the results of the measurements about the plurality of sections.
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公开(公告)号：US20230027464A1
公开(公告)日：2023-01-26
申请号：US17783698
申请日：2020-11-16
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Akihiro SHIMADA , Mitsuhito MASE , Jun HIRAMITSU
Abstract: In a distance measurement device, a control unit performs a charge distribution process in which in a first period, charge generated in a charge generation region is transferred to a first charge storage region and, in a second period, the charge generated in the charge generation region is transferred to a second charge storage region. The control unit applies an electric potential to a first overflow gate electrode so that a potential energy of a region immediately below the first overflow gate electrode is lower than a potential energy of the charge generation region in the first period, and applies an electric potential to a second overflow gate electrode so that a potential energy of a region immediately below the second overflow gate electrode is lower than a potential energy of the charge generation region in the second period.
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公开(公告)号：US20230026004A1
公开(公告)日：2023-01-26
申请号：US17788005
申请日：2020-12-07
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito MASE , Jun HIRAMITSU , Akihiro SHIMADA , Hiroaki ISHII , Toshinori ITO , Yuma TANAKA
IPC: G01S17/89 , H01L27/146
Abstract: A ranging image sensor includes a semiconductor layer and an electrode layer. The semiconductor layer and the electrode layer form a plurality of pixels. Each of the plurality of pixels includes an avalanche multiplication region, a charge distribution region, a first charge transfer region, and a second charge transfer region in the semiconductor layer. Each of the plurality of pixels includes a photogate electrode, a first transfer gate electrode, and a second transfer gate electrode in the electrode layer. The avalanche multiplication region is continuous over the plurality of pixels or reaches a trench formed in the semiconductor layer so as to separate the plurality of pixels from each other.
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公开(公告)号：US20170115392A1
公开(公告)日：2017-04-27
申请号：US15316935
申请日：2015-05-28
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Mitsuhito MASE , Jun HIRAMITSU , Akihiro SHIMADA
CPC classification number: G01S17/10 , G01S7/4816 , G01S7/4817 , G01S7/4863 , G01S7/4865 , G01S7/487 , G01S17/42 , G01S17/89 , H01L27/14603 , H01L27/14612 , H04N5/369
Abstract: In accordance with an irradiation position of pulsed light, a selecting unit outputs a first transfer signal to a first transfer electrodes and outputs a second transfer signal to a second transfer electrodes, to allow signal charges to flow into first and second signal charge-collecting regions of a pixel corresponding to the irradiation position, and outputs a third transfer signal to a third transfer electrodes to allow unnecessary charges to flow into an unnecessary charge-discharging regions of a pixel other than the pixel corresponding to the irradiation position. An arithmetic unit reads out signals corresponding to respective quantities of signal charges collected in the first and second signal charge-collecting regions of the pixel selected by the selecting unit, and calculates a distance to an object based on a ratio between a quantity of signal charges collected in the first signal charge-collecting regions and a quantity of signal charges collected in the second signal charge-collecting regions.
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