公开(公告)号：US11488841B2

公开(公告)日：2022-11-01

申请号：US16795009

申请日：2020-02-19

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Yong Sung Eom ,  Kwang-Seong Choi ,  Ki Seok Jang ,  Seok-Hwan Moon ,  Jiho Joo

IPC: H01L21/50 ,  H01L23/00 ,  H01L21/48 ,  H01L21/60

Abstract: Provided is a method for manufacturing a semiconductor package, the method including providing a semiconductor chip on a substrate, providing a bonding member between the substrate and the semiconductor chip, and bonding the semiconductor chip on the substrate by irradiating of a laser on the substrate. Here, the bonding member may include a thermosetting resin, a curing agent, and a laser absorbing agent.

公开(公告)号：US09728657B2

公开(公告)日：2017-08-08

申请号：US14812981

申请日：2015-07-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jiho Joo ,  Gyungock Kim ,  Myungjoon Kwack ,  Sang Hoon Kim ,  Sun Ae Kim ,  In Gyoo Kim ,  Jaegyu Park ,  Jin Hyuk Oh ,  Ki Seok Jang

IPC: H01L31/0224 ,  H01L31/0352 ,  H01L31/107 ,  H01L31/18

CPC classification number: H01L31/022416 ,  H01L31/03529 ,  H01L31/1075 ,  H01L31/1808 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.

公开(公告)号：US09171996B2

公开(公告)日：2015-10-27

申请号：US13949081

申请日：2013-07-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  In Gyoo Kim ,  Jin Hyuk Oh ,  Sun Ae Kim

IPC: H01L33/06 ,  H01L33/00 ,  H01L31/0352 ,  H01L31/107 ,  B82Y20/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L31/035227 ,  H01L31/035254 ,  H01L31/107 ,  H01L33/0054 ,  Y10S977/762 ,  Y10S977/774 ,  Y10S977/954

Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.

Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。