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11.
公开(公告)号:US20150096615A1
公开(公告)日:2015-04-09
申请号:US14333967
申请日:2014-07-17
Inventor: Kyu Sung LEE , Sun Jin YUN , JungWook LIM
IPC: H01L31/055 , H01L31/0216
CPC classification number: H01L31/055 , H01L31/02168 , Y02E10/52
Abstract: Provided are a solar cell and a solar cell module including the same. The solar cell includes a bottom electrode layer, a light absorption layer disposed on the bottom electrode to absorb solar light of a visible light region, top electrode layer disposed on the light absorption layer, and a light conversion layer disposed on the top electrode layer.
Abstract translation: 提供一种太阳能电池和包括该太阳能电池的太阳能电池模块。 太阳能电池包括底电极层,设置在底电极上以吸收可见光区域的太阳光的光吸收层,设置在光吸收层上的顶电极层和设置在顶电极层上的光转换层。
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公开(公告)号:US20140299189A1
公开(公告)日:2014-10-09
申请号:US14218176
申请日:2014-03-18
Inventor: JungWook LIM , Sun Jin YUN , Da Jung LEE
IPC: H01L31/0745
CPC classification number: H01L31/0745 , H01L31/065 , H01L31/075 , Y02E10/548
Abstract: Provided is the structure of a thin film solar cell. The structure of the thin film solar cell includes a first substrate, a first electrode provided on the first substrate, a p-type semiconductor layer provided on the first electrode, a first buffer layer provided on the p-type semiconductor layer, an optical absorption region provided on the first buffer layer, a second buffer layer provided on the optical absorption region, an n-type semiconductor layer provided on the second buffer layer, a second electrode provided on the n-type semiconductor layer, and a second substrate on the second electrode. The optical absorption region includes a silicon layer, a first layer on the silicon layer, and a second layer having a different energy band gap from the first layer, on the first layer.
Abstract translation: 提供薄膜太阳能电池的结构。 薄膜太阳能电池的结构包括:第一基板,设置在第一基板上的第一电极,设置在第一电极上的p型半导体层,设置在p型半导体层上的第一缓冲层,光吸收 设置在第一缓冲层上的区域,设置在光吸收区域上的第二缓冲层,设置在第二缓冲层上的n型半导体层,设置在n型半导体层上的第二电极,以及设置在第二缓冲层上的第二基板 第二电极。 在第一层上,光吸收区域包括硅层,硅层上的第一层和与第一层具有不同能带隙的第二层。
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公开(公告)号:US20140238479A1
公开(公告)日:2014-08-28
申请号:US14179067
申请日:2014-02-12
Inventor: JungWook LIM , Sun Jin YUN , Seong Hyun LEE
IPC: H01L31/0216
CPC classification number: H01L31/0749 , H01L31/03923 , Y02E10/541
Abstract: Provided is a thin film solar cell including a rear electrode formed on a substrate, a light absorbing layer formed on the rear electrode, a buffer layer formed on the light absorbing layer, and a front transparent electrode formed on the buffer layer. The buffer layer includes copper oxide.
Abstract translation: 提供了一种薄膜太阳能电池,其包括形成在基板上的后电极,形成在后电极上的光吸收层,形成在光吸收层上的缓冲层和形成在缓冲层上的前透明电极。 缓冲层包括氧化铜。
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公开(公告)号:US20140026963A1
公开(公告)日:2014-01-30
申请号:US13952904
申请日:2013-07-29
Inventor: Sun Jin YUN , Chang Bong YEON , Yoo Jeong LEE , JungWook LIM
IPC: H01L31/0232 , H01L31/18
CPC classification number: H01L29/43 , H01L29/423 , H01L31/0224 , H01L31/022425 , H01L31/02327 , H01L31/02366 , H01L31/056 , H01L31/1884 , H01L33/40 , H01L33/405 , H01L51/5203 , H01L51/5209 , H01L2933/0016 , Y02E10/52
Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.
Abstract translation: 提供一种制造电子设备的方法。 根据本发明构思的方法可以包括形成具有平坦部分的下电极和在基板上的突起,在下电极上形成中间层,并在中间层上形成上电极。 下电极的形成可以包括通过在基板上沉积第一金属来形成导电膜,以及在导电膜上沉积第二金属以制备第一金属和第二金属的合金。
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15.
公开(公告)号:US20230335649A1
公开(公告)日:2023-10-19
申请号:US18081332
申请日:2022-12-14
Inventor: JungWook LIM , Jieun KIM
IPC: H01L29/792 , G11C11/56 , H01L29/786
CPC classification number: H01L29/7923 , G11C11/5671 , H01L29/7869
Abstract: A synaptic element performing a multi-level logic operation includes a gate electrode to which a gate voltage pulse is applied, a first electrode, a second electrode, and a multilayer tunnel insulating film in contact with each of the gate electrode, the first electrode, and the second electrode, and disposed such that the gate electrode is spaced apart from the first electrode and the second electrode, and the synaptic element generates a tunneling current flowing from the first electrode to the gate electrode through the multilayer tunnel insulating film based on the gate voltage pulse, the synaptic element operates in one of a turn-on mode, a turn-off mode, and an intermediate mode different from the turn-on mode and the turn-off mode based on the tunneling current, and the synaptic element is trained to generate a drain current in each of the turn-on mode, the turn-off mode, and the intermediate mode.
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公开(公告)号:US20210066321A1
公开(公告)日:2021-03-04
申请号:US16993954
申请日:2020-08-14
Inventor: JungWook LIM , Sun Jin YUN
IPC: H01L27/11517 , G11C5/02 , H01L29/423 , H01L27/11563
Abstract: Provided is a memory device including a gate electrode, a first insulation layer on the gate electrode, a first conductive pattern and a second conductive pattern, which are spaced apart from each other on the first insulation layer, a channel pattern disposed on the first insulation layer to connect the first conductive pattern and the second conductive pattern, and an interface layer disposed between the channel pattern and the first insulation layer and having a hydrogen atom content ratio (atomic %) greater than that of the first insulation layer.
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公开(公告)号:US20190067005A1
公开(公告)日:2019-02-28
申请号:US16047871
申请日:2018-07-27
Inventor: Sun Jin YUN , JungWook LIM , Kwang Hoon JUNG , Hyun Jun CHAI
IPC: H01L21/02 , H01L21/56 , C23C16/30 , C23C16/455 , C23C16/56
Abstract: Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.
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公开(公告)号:US20180057939A1
公开(公告)日:2018-03-01
申请号:US15646051
申请日:2017-07-10
Inventor: Sun Jin YUN , JungWook LIM
CPC classification number: C23C16/45525 , C23C14/08 , C23C14/14 , C23C14/205 , C23C14/352 , C23C14/562 , C23C14/568 , C23C16/06 , C23C16/40 , C23C16/45536 , C23C16/50 , C23C16/545 , H01B13/0026 , H01B13/0036 , H01L31/1884
Abstract: The present disclosure relates to a manufacturing method of a transparent electrode, and more particularly, to a manufacturing method of a transparent electrode by using a roll-to-roll type transparent electrode manufacturing apparatus including at least one atomic layer deposition module, the method comprises: performing a first atomic layer deposition process to respectively form first and second protection layers on a first surface of a flexible substrate and on a second surface opposite to the first surface; performing a second atomic layer deposition process to form a first oxide layer on the first protection layer; forming a metal layer on the first oxide layer; and forming a second oxide layer on the metal flim, wherein each of the performing the first atomic layer deposition process and the second atomic layer deposition process includes using the at least one atomic layer deposition module.
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19.
公开(公告)号:US20170186903A1
公开(公告)日:2017-06-29
申请号:US15457472
申请日:2017-03-13
Inventor: JungWook LIM , Sun Jin YUN
IPC: H01L31/054 , H01L31/0216 , H01L31/056 , H01L31/0224
CPC classification number: H01L31/0547 , H01L31/02167 , H01L31/02168 , H01L31/022466 , H01L31/056 , Y02E10/52
Abstract: Provided are a transparent solar cell and a rear-reflective transparent solar cell module having the same. The transparent solar cell includes a transparent substrate, a first transparent electrode on the transparent substrate, a light absorption layer on the first transparent electrode, a re-absorption enhancing layer on the light absorption layer, and a second transparent electrode on the re-absorption enhancing layer.
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公开(公告)号:US20160249413A1
公开(公告)日:2016-08-25
申请号:US15047695
申请日:2016-02-19
Inventor: JungWook LIM , Sun Jin YUN
CPC classification number: H05B3/84 , H05B3/12 , H05B2203/011
Abstract: Provided is a transparent planar heater including a transparent substrate, a transparent heating layer disposed on the transparent substrate, and an electrode disposed on the transparent heating layer and electrically connected to the transparent heating layer. The transparent heating layer includes a metal layer disposed on the transparent substrate, the metal layer being configured to receive an external power from the electrode, thereby generating heat, and a selective transmission layer disposed on the transparent substrate to block at least a portion of a wavelength region of an infrared rays region of light and transmit a portion of the wavelength region of the light.
Abstract translation: 提供一种透明平面加热器,其包括透明基板,设置在透明基板上的透明加热层,以及设置在透明加热层上并电连接到透明加热层的电极。 所述透明加热层包括设置在所述透明基板上的金属层,所述金属层被配置为从所述电极接收外部电力,从而产生热量;以及选择性透射层,设置在所述透明基板上以阻挡所述透明基板的至少一部分 的红外线区域的波长区域,并透射光的波长区域的一部分。
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