PHOTO DETECTOR
    11.
    发明申请
    PHOTO DETECTOR 有权
    照片检测器

    公开(公告)号:US20160308077A1

    公开(公告)日:2016-10-20

    申请号:US15072228

    申请日:2016-03-16

    Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.

    Abstract translation: 公开了一种光电检测器。 光电检测器包括:导电基板; 形成在所述导电基板上的绝缘层; 在绝缘层的上端的一部分形成并形成在一层中的单层石墨烯; 形成在绝缘层的上端的另一部分并形成多层的多层石墨烯; 形成在单层石墨烯端部的第一电极; 以及形成在多层石墨烯的端部的第二电极。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    12.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 有权
    发光二极管及其制造方法

    公开(公告)号:US20140367731A1

    公开(公告)日:2014-12-18

    申请号:US14290192

    申请日:2014-05-29

    Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a work function of the second electrode.

    Abstract translation: 发光二极管包括:基板; 设置在所述基板上的n型半导体层; 设置在所述n型半导体层上的有源层; 设置在有源层上的p型半导体层; 设置在所述p型半导体层上并由金属氧化物构成的第一电极; 设置在第一电极上并由石墨烯制成的第二电极; 设置在所述第二电极上的p型电极; 以及设置在n型半导体层上的n型电极,其中第一电极的功函数小于p型半导体层的功函数,但大于第二电极的功函数。

    SYSTEM AND METHOD FOR ANALYZING DNA USING APPLICATION OF MOBILE DEVICE
    14.
    发明申请
    SYSTEM AND METHOD FOR ANALYZING DNA USING APPLICATION OF MOBILE DEVICE 审中-公开
    使用移动设备应用分析DNA的系统和方法

    公开(公告)号:US20140287414A1

    公开(公告)日:2014-09-25

    申请号:US14012276

    申请日:2013-08-28

    Abstract: A DNA analysis system that controls DNA analysis by wireless using an application of a mobile device and a very small DNA analysis apparatus, and that receives a DNA analysis result in real time on the spot is provided. Therefore, by performing DNA analysis by simultaneously controlling a plurality of small DNA analysis apparatuses using signal processing and screen display functions of a mobile device, analysis speed of DNA is improved, and an analysis result of DNA can be provided in real time. Further, by forming a DNA analysis apparatus in a very small size, DNA can be immediately analyzed with low power consumption on the spot using a small sample, and the DNA analysis apparatus can be carried.

    Abstract translation: 提供了通过使用移动设备和非常小的DNA分析设备的无线控制DNA分析的DNA分析系统,并且现场实时接收DNA分析结果。 因此,通过使用信号处理和移动装置的屏幕显示功能同时控制多个小型DNA分析装置进行DNA分析,提高了DNA的分析速度,并且可以实时提供DNA的分析结果。 此外,通过形成非常小的DNA分析装置,可以使用小样品立即以低功耗即时分析DNA,并且可以携带DNA分析装置。

    HUMIDITY SENSOR AND BUTTON DEVICE INCLUDING THE SAME

    公开(公告)号:US20210349045A1

    公开(公告)日:2021-11-11

    申请号:US17314038

    申请日:2021-05-06

    Abstract: Provided is a button device including a humidity sensor. The button device includes a substrate having a plurality of sensing regions, a housing on the substrate, the housing separating a first sensing region of the plurality of sensing regions from other sensing regions, a porous structure within the housing, the porous structure having through-holes, a first electrode on the porous structure, a second electrode on the porous structure, the second electrode being electrically connected to the first electrode through the porous structure, and a temperature sensor disposed adjacent to the first sensing region to sense a temperature of the first sensing region, The porous structure includes a body having an outer surface defining the through-holes, the body having an air gap therein.

    GAS SENSOR APPARATUS
    17.
    发明申请
    GAS SENSOR APPARATUS 审中-公开
    气体传感器装置

    公开(公告)号:US20160091447A1

    公开(公告)日:2016-03-31

    申请号:US14711520

    申请日:2015-05-13

    CPC classification number: G01N27/125 B82Y30/00

    Abstract: Provided herein is a gas sensor apparatus including a first sensor unit, second sensor unit, and signal processing unit. The first sensor unit has a channel area doped to an n-type such that it may selectively react to a donor molecule in gas. The second sensor unit has a channel area doped to a p-type such that it may selectively react to an acceptor molecule in gas. The signal processing unit receives a sense signal of the donor molecule from the first sensor unit and a sense signal of the acceptor molecule from the second sensor unit, processes the received sense signals and generates result data of processing the received sense signals. Therefore, the gas sensor apparatus may selectively sense donor gas and acceptor gas.

    Abstract translation: 本文提供了一种气体传感器装置,其包括第一传感器单元,第二传感器单元和信号处理单元。 第一传感器单元具有掺杂到n型的通道区域,使得其可以选择性地与气体中的供体分子反应。 第二传感器单元具有掺杂到p型的通道区域,使得其可以选择性地与气体中的受体分子反应。 信号处理单元从第一传感器单元接收施主分子的感测信号和来自第二传感器单元的受主分子的感测信号,处理接收到的感测信号并产生处理接收的感测信号的结果数据。 因此,气体传感器装置可以选择性地感测供体气体和受体气体。

    METHOD OF GROWING HIGH-QUALITY SINGLE LAYER GRAPHENE BY USING Cu/Ni MULTI-LAYER METALIC CATALYST, AND GRAPHENE DEVICE USING THE SAME
    19.
    发明申请
    METHOD OF GROWING HIGH-QUALITY SINGLE LAYER GRAPHENE BY USING Cu/Ni MULTI-LAYER METALIC CATALYST, AND GRAPHENE DEVICE USING THE SAME 有权
    通过使用Cu / Ni多层金属催化剂生长高质量单层石墨的方法和使用其的石墨设备

    公开(公告)号:US20150191358A1

    公开(公告)日:2015-07-09

    申请号:US14314153

    申请日:2014-06-25

    Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.

    Abstract translation: 公开了通过使用Cu / Ni多层金属催化剂生长高质量单层石墨烯的方法和使用其的石墨烯装置。 该方法通过使用Cu / Ni多层金属催化剂来控制和生长高质量的单层石墨烯,其中在下列情况下,固定有镍下层的厚度和铜上层的厚度,在石墨烯为 通过CVD法生长。 根据该方法,可以通过利用高品质的单层石墨烯来获得高品质的单层石墨烯,并提高石墨烯应用装置的性能,从而对石墨烯施加装置的工业化起到非常重要的作用。

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