公开(公告)号：US10755939B2

公开(公告)日：2020-08-25

申请号：US16567262

申请日：2019-09-11

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Kilwon Cho ,  Min Seok Yoo ,  Hyo Chan Lee

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02 ,  H01L21/263 ,  H01L23/532 ,  H01L29/16

Abstract: Disclosed is a method of manufacturing multilayer graphene, including (a) contacting of a metal substrate with a nonmetal element, (b) reduction through heat treatment, and (c) chemical vapor deposition of a graphene precursor on the metal substrate containing the nonmetal element dissolved therein, thereby manufacturing multilayer graphene that is doped with the nonmetal element on the metal substrate. In the multilayer graphene thus manufactured, the number of graphene layers and the work function are simultaneously adjusted by controlling the concentration of doped nonmetal element in a thickness direction of graphene through interactions related to the reduction of the nonmetal element dissolved in a copper catalyst and the growth of graphene, and moreover, the stacking structure of graphene is maintained and the optoelectronic properties of multilayer graphene can be controlled by simultaneously regulating graphene growth and doping during the synthesis procedure without additional processing.

公开(公告)号：US10023469B2

公开(公告)日：2018-07-17

申请号：US15324297

申请日：2015-05-15

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

Inventor： Kilwon Cho ,  Hyo Chan Lee ,  Eun Ho Lee

IPC: C01B31/04 ,  H01B13/00 ,  B82Y40/00 ,  B82Y30/00

Abstract: Disclosed is a method of producing graphene, which includes bringing a metal catalyst into contact with hydrogen gas (Step a), bringing the metal catalyst in Step a into contact with at least one selected from among a hydrocarbon gas, nitrogen gas, and an inert gas (Step b), and forming graphene on the metal catalyst by bringing the metal catalyst in Step b into contact with hydrogen gas and a hydrocarbon gas (Step c), whereby the number of layers of graphene can be variously controlled as needed, regardless of the initial surface roughness of a metal catalyst layer, and also, the time required to form graphene can be shortened, thus reducing processing costs.